10N60K [UTC]
10A, 600V N-CHANNEL POWER MOSFET; 10A ， 600V N沟道功率MOSFET
| 型号： | 10N60K |
| 厂家： | 
Unisonic Technologies |
| 描述： | 10A, 600V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N60K
Preliminary
Power MOSFET
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
The UTC 10N60K is an N-channel Power MOSFET using UTC’s
TO-220F
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N60K is generally applied in high efficient DC to DC
converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON)=0.72Ω @ VGS=10V, ID =4.75A
* Low Gate Charge (Typical 44nC)
* Low CRSS ( typical 18 pF)
* High Switching Speed
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220F
Packing
Tube
Lead Free
Halogen Free
10N60KG-TF3-T
1
2
3
10N60KL-TF3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
1 of 7
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-743a
10N60K
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
10
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
IDM
38
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
300
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
PD
4.5
156
Junction Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 ꢀ Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.5
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
V
VDS = 600V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
1
µA
Forward
Reverse
100 nA
-100 nA
V/°C
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID = 5A
0.5 0.72 1.2
ꢀ
CISS
COSS
CRSS
1570 2040 pF
166 215 pF
VDS=25V, VGS=0V,
f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
18
24
pF
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-743.a
www.unisonic.com.tw
10N60K
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
23
55
ns
69 150 ns
144 260 ns
77 105 ns
V
DD=300V, ID =10A,
RG =25ꢀ (Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
44
6.7
57 nC
nC
VDS=480V, ID=10A,
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
VGS=10 V (Note 1, 2)
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS =10A
1.4
10
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
38
A
Reverse Recovery Time
trr
420
4.2
ns
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 1)
Reverse Recovery Charge
QRR
µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-743.a
www.unisonic.com.tw
10N60K
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-743.a
www.unisonic.com.tw
10N60K
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-743.a
www.unisonic.com.tw
10N60K
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-743.a
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明