10NN15L-S08-R [UTC]

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET; 双N沟道增强型功率MOSFET


型号：	10NN15L-S08-R
厂家：	Unisonic Technologies
描述：	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET 双N沟道增强型功率MOSFET
文件：	总4页 (文件大小：151K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

10NN15

Preliminary

Power MOSFET

DUAL N-CHANNEL

ENHANCEMENT MODE POWER

MOSFET

DESCRIPTION

SOP-8

The UTC 10NN15 is a Dual N-channel enhancement mode power

MOSFET using UTC’s perfect technology to provide customers with

fast switching, ruggedized device design, low on-resistance and

cost-effectiveness.

FEATURES

* High switching speed

* Low Gate Charge

* Simple Drive Requirement

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

5, 6 7, 8

S1 G1 S2 G2 D2 D1

Package

SOP-8

Packing

Lead Free

Halogen Free

10NN15L-S08-R

10NN15G-S08-R

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

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10NN15

Preliminary

Power MOSFET

PIN CONFIGURATION

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10NN15

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

150

±20

Continuous (Note 3)

Pulsed (Note 2)

Drain Current

I_DM

Power Dissipation

P_D

°C

Junction Temperature

Storage Temperature

T_J

+150

-55~+150

T_STG

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by Max. junction temperature.

3. Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min. copper pad.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°C/W

Junction to Ambient (Note 3)

θ_JA

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

150

V_DS=150V, V_GS=0V

V_GS=+20V, V_DS=0V

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS=-20V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=3A

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

400 mΩ

C_ISS

C_OSS

C_RSS

420 672 pF

_GS=0V, V_DS=25V, f=1.0MHz

_GS=10V, V_DS=120V, I_D=3A

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

(Note 1, 2)

6.5

V_DS=75V, V_GS=10V, I_D=3A,

R_G=3.3Ω (Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

V_SD

t_RR

I_S=3A, V_GS=0V

1.3

µC

I_S=3A, V_GS=0V, dI_F/dt=100A/µs

Q_RR

Note: 1. Pulse width ≤ 300µs, duty cycle ≤ 2% .

2. Essentially independent of operating temperature.

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10NN15

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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