12N40G-TA3-T [UTC]

12A, 400V N-CHANNEL POWER MOSFET; 12A , 400V N沟道功率MOSFET
12N40G-TA3-T
型号: 12N40G-TA3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

12A, 400V N-CHANNEL POWER MOSFET
12A , 400V N沟道功率MOSFET

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
12N40  
Preliminary  
Power MOSFET  
12A, 400V N-CHANNEL  
POWER MOSFET  
1
TO-220  
„
DESCRIPTION  
The UTC 12N40 is an N-channel mode power MOSFET using  
UTC’ s advanced technology to provide customers with planar stripe  
and DMOS technology. This technology specializes in allowing a  
minimum on-state resistance and superior switching performance. It  
also can withstand high energy pulse in the avalanche and  
commutation mode.  
1
TO-220F1  
The UTC 12N40 is universally applied in electronic lamp ballast  
based on half bridge topology and high efficient switched mode  
power supply.  
„
FEATURES  
* RDS(ON)=0.47@ VGS=10V  
* High switching speed  
* 100% avalanche tested  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
3
S
S
12N40L-TA3-T  
12N40L-TF1-T  
12N40G-TA3-T  
12N40G-TF1-T  
TO-220  
TO-220F1  
G
G
Tube  
Tube  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-574.b  
12N40  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
400  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±30  
V
Continuous (TC=25°C)  
Pulsed (Note 2)  
12  
A
Drain Current  
IDM  
48  
A
Single Pulsed Avalanche Energy  
EAS  
474  
mJ  
W
TO-220  
TO-220F1  
TO-220  
192  
Power Dissipation  
42  
W
PD  
1.53  
0.33  
+150  
-55~+150  
W/°C  
W/°C  
°C  
Derate above 25°C  
TO-220F1  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
°C  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
Junction to Ambient  
θJA  
TO-220  
TO-220F1  
0.65  
Junction to Case  
θJC  
°C/W  
3.0  
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
ID=250µA, VGS=0V  
400  
V
VDS=400V, VGS=0V  
VGS=+30V, VDS=0V  
1
µA  
Forward  
+100 nA  
-100 nA  
Gate- Source Leakage Current  
IGSS  
Reverse  
VGS=-30V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=10V, ID=12A  
2.0  
4.0  
V
Static Drain-Source On-State Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
0.34 0.47  
CISS  
COSS  
CRSS  
3000 pF  
900 pF  
400 pF  
VGS=0V, VDS=25V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Turn-ON Delay Time  
Rise Time  
tD(ON)  
tR  
tD(OFF)  
tF  
30  
50  
ns  
VDD=200V, ID=12A, RG=25ꢀ  
(Note 1, 2)  
105 150 ns  
480 750 ns  
140 200 ns  
Turn-OFF Delay Time  
Fall-Time  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
VSD  
IS  
IS=12A, VGS=0V  
1.4  
12  
48  
V
A
A
ISM  
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-574.b  
www.unisonic.com.tw  
12N40  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-574.b  
www.unisonic.com.tw  
12N40  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
VDS  
90%  
10%  
VGS  
tD(ON)  
tD(OFF)  
tF  
tR  
Switching Test Circuit  
Switching Waveforms  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-574.b  
www.unisonic.com.tw  

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