13003DFL-XX-T60-F-K [UTC]
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION;
| 型号： | 13003DFL-XX-T60-F-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
13003DF
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR
TRANSISTORS FOR LOW
FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC 13003DF is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC 13003DF is suitable for electronic ballast power switch
circuit and the compact electronic energy-saving light.
FEATURES
* High collector-base breakdown voltage
* Low reverse leakage current
* High reliability
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
B
E
E
2
C
C
C
3
E
B
B
13003DFL-xx-T60-F-K
13003DFL-xx-T92-A-B
13003DFL-xx-T92-A-K
13003DFG-xx-T60-F-K
13003DFG-xx-T92-A-B
13003DFG-xx-T92-A-K
TO-126
TO-92
TO-92
Bulk
Tape Box
Bulk
Note: Pin Assignment: B: Base C: Collector
E: Emitter
13003DFL-T60-F-B
(1)Packing Type
(1) B: Bluk, K: Bulk
(2)Pin Assignment
(3)Package Type
(4)Lead Free
(2) refer to Pin Assignment
(3) T60: TO-126, T92: TO-92
(4) L: Lead Free, G: Halogen Free
MARKING
TO-126
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R223-014.d
13003DF
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
600
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
400
V
9
V
Continuous Collector Current
1.5
A
TA=25°C
TC=25°C
1.25
50
W
W
°C
°C
Power Dissipation
PD
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=0.1mA
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
600
400
9
V
V
IC=1mA
IE=0.1mA
V
VCB=600V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
0.1 mA
0.1 mA
0.1 mA
30
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note 1)
ICEO
IEBO
hFE
VCE=5V, IC=0.2A
hFE1: VCE=5V, IC=5mA
hFE2: VCE=5V, IC=0.2A
15
Low current and high current hFE2 hFE1 ratio
hFE1/ hFE2
0.75 0.9
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
Storage Time
VCE(SAT) IC=1A, IB=0.25A
0.3 0.9
0.9 1.2
V
V
VBE(SAT)
IC=1A, IB=0.25A
tS
tR
tF
fT
3
5
5
1
1
μs
Rise Time
UI9600, IC=0.1A
μs
Fall Time
μs
Transition Frequency
IC=0.1A, VCE=10V, f=1MHz
MHz
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
15 ~ 20
20 ~ 25
25 ~ 30
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R223-014.d
www.unisonic.com.tw
13003DF
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R223-014.d
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明