18N40L-TF2-T [UTC]

N-CHANNEL POWER MOSFET;
18N40L-TF2-T
型号: 18N40L-TF2-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

N-CHANNEL POWER MOSFET

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
18N40  
Power MOSFET  
18A, 400V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 18N40 is a 400V N-channel power MOSFET, providing  
customers with perfect RDS(ON), low gate charge and operation with  
low gate voltages.  
The UTC 18N40 is generally used as a load switch or applied in  
PWM applications.  
FEATURES  
* RDS(ON) 0.24@VGS = 10V  
* Fast Switching Speed  
* Avalanche Energy Specified  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
2 3  
Package  
Packing  
Lead Free  
18N40L-TA3-T  
Halogen-Free  
1
18N40G-TA3-T  
18N40G-TF1-T  
18N40G-TF2-T  
18N40G-T47-T  
D: Drain S: Source  
TO-220  
TO-220F1  
TO-220F2  
TO-247  
G
G
G
G
D
D
D
D
S
S
S
S
Tube  
Tube  
Tube  
Tube  
18N40L-TF1-T  
18N40L-TF2-T  
18N40L-T47-T  
Note: Pin Assignment: G: Gate  
MARKING INFORMATION  
PACKAGE  
MARKING  
TO-220  
TO-220F1  
TO-220F2  
TO-247  
www.unisonic.com.tw  
1 of 4  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-389.F  
18N40  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
400  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±30  
V
Continuous  
Pulsed  
18  
A
Drain Current  
IDM  
72  
A
Avalanche Current  
Avalanche Energy  
Peak Diode Recovery dv/dt  
IAR  
18  
A
Single Pulsed  
Repetitive  
EAS  
1000  
30  
mJ  
mJ  
V/ns  
EAR  
dv/dt  
10  
TO-220  
235  
TO-220F1  
TO-220F2  
TO-247  
38.5  
40.5  
360  
Power Dissipation  
PD  
W
Junction Temperature  
Storage Temperature  
TJ  
150  
°С  
°С  
TSTG  
-55 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
PARAMETER  
TO-220  
SYMBOL  
RATINGS  
0.53  
UNIT  
TO-220F1  
TO-220F2  
TO-247  
3.3  
Junction to Case  
θJC  
°С/W  
3.0  
0.35  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-389.F  
www.unisonic.com.tw  
18N40  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Body Leakage Current  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
BVDSS  
IDSS  
VGS=0V, ID=250µA  
400  
2.0  
V
VDS=400V, VGS=0V  
VDS=0V, VGS=±30V  
25  
µA  
nA  
IGSS  
±100  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=10V, ID=9A  
4.0  
V
0.18 0.24  
CISS  
COSS  
CRSS  
2500  
280  
23  
pF  
pF  
pF  
Output Capacitance  
VDS=25V, VGS=0V, f=1MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
50  
15  
18  
21  
22  
62  
22  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=10V, VDS=0.5VDSS  
ID=18A, RG=5(Note 1, 2)  
,
Gate Source Charge  
Gate Drain Charge  
Turn-ON Delay Time  
Turn-ON Rise Time  
VGS=10V, VDS=0.5VDSS  
ID=9A (Note 1, 2)  
,
Turn-OFF Delay Time  
tD(OFF)  
tF  
Turn-OFF Fall-Time  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source  
Diode Forward Current  
VSD  
IF=IS ,VGS=0V  
1.5  
18  
V
A
IS  
VGS=0V  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
Repetitive  
72  
A
Reverse Recovery Time  
trr  
200  
0.8  
ns  
VGS=0V, dIF/dt=100A/µs,  
IS=18A, VR=100V (Note 1)  
Reverse Recovery Charge  
QRR  
µC  
Notes: 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.  
Notes: 2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-389.F  
www.unisonic.com.tw  
18N40  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Drain-Source On-State Resistance  
Characteristics  
Drain Current vs. Source to Drain Voltage  
12  
10  
8
12  
10  
VGS=10V,  
ID=9.0A  
8
6
4
6
4
2
0
2
0
0
200  
400  
600  
1000  
0
1.0  
1.5  
2.0  
800  
0.5  
Drain to Source Voltage, VDS (V)  
Source to Drain Voltage,VSD (mV)  
Drain Current vs. Drain-Source  
Breakdown Voltage  
Drain Current vs. Gate Threshold Voltage  
300  
250  
200  
150  
300  
250  
200  
150  
100  
50  
100  
50  
0
0
0
2
3
100  
200  
300  
400  
1
4
0
500  
Gate Threshold Voltage,VTH (V)  
Drain-Source Breakdown Voltage,BVDSS(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-389.F  
www.unisonic.com.tw  

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