18N50 [UTC]
18A, 500V N-CHANNEL POWER MOSFET; 18A ， 500V N沟道功率MOSFET
| 型号： | 18N50 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 18A, 500V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
18N50
Power MOSFET
18A, 500V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
TO-220F1
TO-220F2
The UTC 18N50 is an N-channel enhancement mode power
MOSFET using UTC’s advanced planar stripe and DMOS technology
to provide perfect performance.
This technology can withstand high energy pulse in the avalanche
and commutation mode. It can provide minimum on-state resistance
and high switching speed.
1
This device is generally applied in active power factor correction
and high efficient switched mode power supplies.
FEATURES
* RDS(ON)=0.32Ω @ VGS=10V
* High switching speed
* Typically 45nC low gate charge
* 100% avalanche tested
* Typically 25pF low CRSS
* Improved dv/dt capability
1
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
18N50L-TF1-T
Halogen Free
1
2
3
G
G
G
G
D
D
D
D
S
S
S
S
18N50G-TF1-T
18N50G-TF2-T
18N50G-TQ2-T
18N50G-TQ2-R
TO-220F1
TO-220F2
TO-263
Tube
Tube
18N50L-TF2-T
18N50L-TQ2-T
Tube
18N50L-TQ2-R
TO-263
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-477.G
18N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
±30
V
Continuous
18
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
72 (Note 5)
945
A
EAS
mJ
mJ
A
Avalanche Energy
EAR
23.5
Avalanche Current (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220F1
IAR
18
dv/dt
4.5
V/ns
38.5
Power Dissipation
TO-220F2
TO-263
PD
40.5
W
23.5
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220F1
TO-220F2
TO-263
3.3
Junction to Case
θJc
3.0
°C/W
0.53
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-477.G
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18N50
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
500
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
0.5
V
DS=500V, VGS=0V
VDS=400V, TC=125°C
GS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
1
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
10
µA
Forward
Reverse
V
100
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
RDS(ON) VGS=10V, ID=9A
2.0
4.0
V
Ω
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
0.24 0.32
25
gFS
VDS=40V, ID=9A (Note 1)
CISS
COSS
CRSS
2200 2860 pF
Output Capacitance
VDS=25V,VGS=0V,f=1.0MHz
330 430
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
25
40
QG
QGS
QGD
tD(ON)
tR
45
12.5
19
60
nC
nC
nC
ns
ns
ns
ns
V
DS=400V, VGS=10V, ID=18A
Gate-Source Charge
(Note 1,2)
Gate-Drain Charge
Turn-ON Delay Time
55
120
Turn-ON Rise Time
165 340
VDD=250V, ID=18A,
RG=25Ω (Note 1,2)
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
95
90
200
190
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
18
72
A
A
IS =18A, VGS=0V
GS=0V, IS=18A,
dIF/dt=100A/μs (Note 1)
1.4
V
500
5.4
ns
μC
V
QRR
Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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QW-R502-477.G
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18N50
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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18N50
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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18N50
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
100 200 300 400 500 600
0
1
2
3
4
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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