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19N10G-TN3-R [UTC]

100V N-Channel MOSFET; 100V N沟道MOSFET
19N10G-TN3-R
型号： 19N10G-TN3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

100V N-Channel MOSFET
100V N沟道MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件： 总6页 (文件大小：227K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
19N10  
Power MOSFET  
100V N-Channel MOSFET  
„
DESCRIPTION  
The UTC 100V N-Channel enhancement mode power field  
effect transistors (MOSFET) are produced by UTC’s planar stripe,  
DMOS technology which has been tailored especially in the  
avalanche and commutation mode to minimize on-state resistance,  
provide superior switching performance, and withstand high energy  
pulse. They are suited for low voltage applications such as audio  
amplifier, high efficiency switching DC/DC converters, and DC motor  
control.  
„
FEATURES  
* RDS(ON) = 0.1Ω @VGS = 10 V  
* Ultra low gate charge ( typical 19nC )  
* Low reverse transfer Capacitance ( CRSS = typical 32pF )  
* Fast switching capability  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
D
D
D
3
19N10L-T3P-T  
19N10L-TA3-T  
19N10L-TM3-T  
19N10L-TN3-R  
19N10L-TQ2-R  
19N10L-TQ2-T  
19N10G-T3P-T  
19N10G-TA3-T  
19N10G-TM3-T  
19N10G-TN3-R  
19N10G-TQ2-R  
19N10G-TQ2-T  
TO-3P  
TO-220  
TO-251  
TO-252  
TO-263  
TO-263  
G
G
G
G
G
G
S
Tube  
Tube  
S
S
S
S
S
Tube  
Tape Reel  
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 6  
Copyright © 2009 Unisonic Technologies Co., Ltd  
QW-R502-261.D  
19N10  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
100  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
± 25  
V
Continuous Drain Current  
15.6  
A
Pulsed Drain Current (Note 2)  
Avalanche Current (Note 2)  
Single Pulsed Avalanche Energy (Note 3)  
Repetitive Avalanche Energy (Note 2)  
Peak Diode Recovery dv/dt (Note 4)  
TO-251/TO-252  
IDM  
62.4  
A
IAR  
15.6  
A
EAS  
220  
mJ  
mJ  
V/ns  
W
EAR  
5.0  
dv/dt  
6.0  
50  
Power Dissipation  
TO-220/TO-263  
PD  
62.5  
W
178  
W
TO-3P  
Junction Temperature  
TJ  
+150  
-55 ~ +150  
°C  
°C  
Storage Temperature  
TSTG  
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width limited by TJ(MAX)  
3. L=1.35mH, IAS=15.6A, VDD=25V, RG=25 ꢀ, Starting TJ=25°C  
4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
50  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
TO-251/TO-252  
TO-220/TO-263  
TO-3P  
Junction to Ambient  
Junction to Case  
θJA  
62.5  
40  
TO-251/TO-252  
TO-220/TO-263  
TO-3P  
2.5  
θJC  
2.0  
0.7  
„
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
VGS=0V, ID=250µA  
ID=250µA,  
Referenced to 25°C  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
100  
V
∆BVDSS/∆TJ  
V/°C  
0.1  
VDS=100V, VGS=0V  
Drain-Source Leakage Current  
IDSS  
IGSS  
1
µA  
nA  
VGS=25V, VDS=0V  
VGS=-25V, VDS=0V  
Forward  
Reverse  
100  
-100  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
V
V
V
DS=VGS, ID=250µA  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
gFS  
2.0  
4.0  
0.1  
11  
V
ꢀ
S
GS=10V, ID=7.8A  
0.078  
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC PARAMETERS  
Input Capacitance  
DS=40V, ID=7.8A (Note 1)  
CISS  
COSS  
CRSS  
600  
165  
32  
780  
215  
40  
pF  
pF  
pF  
VDS=25V, VGS=0V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
2 of 6  
QW-R502-261.D  
19N10  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
19  
3.9  
9.0  
7.5  
150  
20  
25  
nC  
V
DS=80V, ID=19A, VGS=10V  
Gate Source Charge  
Gate Drain Charge  
(Note 1, 2)  
Turn-ON Delay Time  
Turn-ON Rise Time  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
25  
310  
50  
ns  
ns  
ns  
ns  
VDD=50V, ID=19A, RG=25ꢀ  
(Note 1, 2)  
tD(OFF)  
tF  
65  
140  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Diode Forward Voltage  
VSD  
IS  
VGS=0V, IS=15.6A  
1.5  
V
A
Maximum Body-Diode Continuous Current  
Maximum Pulsed Drain-Source Diode  
Forward Current  
15.6  
ISM  
62.4  
A
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
tRR  
V
GS= 0V, IS=19A,  
78  
ns  
dIF/dt=100A/μs (Note 1)  
QRR  
200  
nC  
Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2%  
Note: 2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
3 of 6  
QW-R502-261.D  
19N10  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
P.W.  
D=  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
4 of 6  
QW-R502-261.D  
19N10  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDS  
90%  
VDD  
VGS  
RG  
10%  
VGS  
D.U.T.  
10V  
tD(ON)  
tD(OFF)  
Pulse Width≤ 1μs  
Duty Factor≤0.1%  
tF  
tR  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
QG  
10V  
QGS  
QGD  
VGS  
Charge  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
R
VDD  
D
ID(t)  
VDS(t)  
VDD  
10V  
D.U.T.  
tp  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
5 of 6  
QW-R502-261.D  
19N10  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
6 of 6  
QW-R502-261.D  

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