19N10L-TMS4-T [UTC]
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE;
| 型号： | 19N10L-TMS4-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE |
| 文件： | 总8页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
19N10
Power MOSFET
15.6A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse. They are suited for low voltage
applications such as audio amplifier, high efficiency switching
DC/DC converters, and DC motor control.
FEATURES
* RDS(ON) < 0.1Ω @ VGS=10V, ID=7.8A
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
www.unisonic.com.tw
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-261.J
19N10
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
19N10L-T3P-T
Halogen Free
1
2
D
D
D
D
D
D
D
D
D
D
D
3
19N10G-T3P-T
19N10G-TA3-T
19N10G-TF3-T
19N10G-TF1-T
19N10G-TM3-T
19N10G-TMS-T
19N10G-TMS2-T
19N10G-TMS4-T
19N10G-TN3-R
19N10G-TQ2-R
19N10G-TQ2-T
TO-3P
TO-220
G
G
G
G
G
G
G
G
G
G
G
S
Tube
Tube
19N10L-TA3-T
S
S
S
S
S
S
S
S
S
S
19N10L-TF3-T
TO-220F
TO-220F1
TO-251
Tube
19N10L-TF1-T
Tube
19N10L-TM3-T
Tube
19N10L-TMS-T
19N10L-TMS2-T
19N10L-TMS4-T
19N10L-TN3-R
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
19N10L-TQ2-R
TO-263
19N10L-TQ2-T
TO-263
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-261.J
19N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
100
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
± 25
15.6
9.8
V
TC=25°C
A
Continuous Drain Current
ID
TC=100°C
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-263
IDM
IAR
62.4
15.6
220
A
A
EAS
EAR
dv/dt
mJ
mJ
V/ns
W
5.0
6.0
62.5
38
TO-220F/TO-220F1
W
TO-251/TO-251S
Power Dissipation
PD
TO-251S2/TO-251S4
50
W
TO-252
TO-3P
178
+150
W
°C
°C
Junction Temperature
Storage Temperature
TJ
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=1.8mH, IAS=15.6A, VDD=25V, RG=25 ꢀ, Starting TJ=25°C
4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F1/TO-263
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252
Junction to Ambient
Junction to Case
θJA
50
°C/W
TO-3P
40
2.0
°C/W
°C/W
°C/W
TO-220/TO-263
TO-220F/TO-220F1
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252
3.95
θJC
2.5
0.7
°C/W
°C/W
TO-3P
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-261.J
19N10
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS=0V, ID=250µA
100
V
ID=250µA,
∆BVDSS/∆TJ
0.1
V/°C
Referenced to 25°C
VDS=100V, VGS=0V
VDS=100V, TJ=125°C
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
1
µA
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
10
Forward
Reverse
100
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=7.8A
2.0
4.0
V
ꢀ
S
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
0.078 0.1
11
VDS=40V, ID=7.8A (Note 1)
CISS
COSS
CRSS
600
780
pF
pF
pF
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
165 215
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
32
40
25
QG
QGS
QGD
tD(ON)
tR
19
6
nC
nC
nC
ns
ns
ns
ns
VDS=50V, ID=1.3A, VGS=10V
Gate Source Charge
(Note 1, 2)
Gate Drain Charge
6
Turn-ON Delay Time
45
70
165
78
60
90
Turn-ON Rise Time
VDD=30V, ID=0.5A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
250
90
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
VGS=0V, IS=15.6A
1.5
V
A
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current
15.6
ISM
62.4
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
VGS= 0V, IS=19A,
dIF/dt=100A/μs (Note 1)
78
ns
QRR
200
nC
Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2%
Note: 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-261.J
19N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
P.W.
D=
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-261.J
19N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width≤ 1μs
Duty Factor≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
QG
10V
QGS
QGD
VGS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
R
VDD
D
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-261.J
19N10
Power MOSFET
TYPICAL CHARACTERISTICS
Transient Thermal Response Curve
Safe Operating Area
1
Operation in This Area is Limited by RDS(on)
D=0.5
0.2
102
10µs
100µs
1ms
0.1
101
100
0.1
0.05
10ms
DC
0.02
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
0.01
Notes:
1. θJC (t) = 2.5°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
Single Pulse
0.01
10-1
100
101
102
10-5
10-4 10-3
10-2
10-1
100
101
Drain-Source Voltage, VDS (V)
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-261.J
19N10
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-261.J
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