1N60-B-TN3-T [UTC]

Transistor;


型号：	1N60-B-TN3-T
厂家：	Unisonic Technologies
描述：	Transistor
文件：	总6页 (文件大小：286K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

1N60

Power MOSFET

1.2 Amps, 600/650 Volts

N-CHANNEL MOSFET

DESCRIPTION

The UTC 1N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies, PWM motor

controls, high efficient DC to DC converters and bridge circuits.

FEATURES

* R_DS(ON)=11.5Ω@V_GS= 10V.

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (C_RSS= typical 3.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

1N60L-x-AA3-B

1N60L-x-T92-B

1N60L-x-T92-K

1N60L-x-TA3-T

1N60L-x-TF3-T

1N60L-x-TM3-T

1N60L-x-TN3-R

1N60L-x-TN3-T

Halogen Free

1N60G-x-AA3-B

1N60G-x-T92-B

1N60G-x-T92-K

1N60G-x-TA3-T

1N60G-x-TF3-T

1N60G-x-TM3-T

1N60G-x-TN3-R

1N60G-x-TN3-T

1N60-x-AA3-B

1N60-x-T92-B

1N60-x-T92-K

1N60-x-TA3-T

1N60-x-TF3-T

1N60-x-TM3-T

1N60-x-TN3-R

1N60-x-TN3-T

SOT-223

TO-92

Tape Reel

Tape Box

Bulk

TO-92

TO-220

TO-220F

TO-251

TO-252

Tube

Tape Reel

Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

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1N60

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

1N60-A

1N60-B

600

Drain-Source Voltage

Gate-Source Voltage

650

V_GSS

I_AR

±30

Avalanche Current (Note 1)

Continuous Drain Current

Pulsed Drain Current (Note 1)

1.2

I_D

1.2

I_DM

4.8

Single Pulsed (Note 2)

Repetitive (Note 1)

E_AS

E_AR

dv/dt

V/ns

Avalanche Energy

4.0

Peak Diode Recovery dv/dt (Note 3)

4.5

SOT-223

TO-251

TO-252

Power Dissipation

P_D

TO-220

TO-220F

TO-92(T_a=25℃)

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

℃

T_OPR

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

150

UNIT

SOT-223

TO-251

TO-252

TO-220

TO-220F

TO-92

110

62.5

140

Junction-to-Ambient

Junction-to-Case

θ_JA

℃/W

SOT-223

TO-251

TO-252

TO-220

TO-220F

4.53

3.13

5.95

θ_Jc

℃/W

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1N60

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

1N60-A

1N60-B

600

650

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

V_DS=600V, V_GS=0V

V_GS=30V, V_DS=0V

10 μA

100 nA

-100 nA

Forward

Reverse

I_GSS

_GS=-30V, V_DS=0V

Breakdown Voltage Temperature

Coefficient

△BV_DSS/△T_JI_D=250μA

0.4

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

2.0

4.0

9.3 11.5

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS=10V, I_D=0.6A

Ω

C_ISS

C_OSS

C_RSS

120 150 pF

20 25 pF

3.0 4.0 pF

V_DS=25V, V_GS=0V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

V_DD=300V, I_D=1.2A, R_G=50Ω

(Note 4,5)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

5.0 6.0 nC

_DS=480V, V_GS=10V, I_D=1.2A

Gate-Source Charge

Q_GS

Q_GD

1.0

2.6

(Note 4,5)

Gate-Drain Charge

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS=0V, I_S=1.2A

1.4

1.2

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

4.8

Reverse Recovery Time

t_RR

V_GS=0V, I_S=1.2A

dI_F/dt=100A/μs (Note1)

160

0.3

Reverse Recovery Charge

Q_RR

μC

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 60mH, I_AS= 1A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

3. I_SD≤ 1.2A, di/dt ≤ 200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

4. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

5. Essentially Independent of Operating Temperature

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QW-R502-052,H

1N60

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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1N60

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

I_AS

R_D

V_DD

I_D(t)

V_DS(t)

V_DD

10V

D.U.T.

t_p

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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1N60

Power MOSFET

TYPICAL CHARACTERISTICS

Drain Current vs.

Drain-Source On-State

Source to Drain Voltage

Resistance Characteristics

1400

1200

1000

800

V_GS=10V

I_D=0.6A

600

400

200

300

200

400

600

800

1000

100 200

500

600

400

Drain to Source Voltage, V_DS(mV)

Source to Drain Voltage,V_SD(mV)

Drain Current vs.

Gate Threshold Voltage

Drain-Source Breakdown Voltage

300

250

200

150

100

450

400

350

300

250

200

150

100

Drain-Source Breakdown Voltage,BV_DSS(V)

200

400

600

800

Gate Threshold Voltage,V_TH(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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