1N60G-TMS4-T [UTC]

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1N60G-TMS4-T
型号: 1N60G-TMS4-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

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UNISONIC TECHNOLOGIES CO., LTD  
1N60  
Power MOSFET  
1.2A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 1N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged  
avalanche characteristics. This power MOSFET is usually used at  
high speed switching applications in power supplies, PWM motor  
controls, high efficient DC to DC converters and bridge circuits.  
FEATURES  
* RDS(ON) <11.5@ VGS=10V, ID=0.6A  
* Ultra Low gate charge (typical 5.0nC)  
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-052.N  
1N60  
Power MOSFET  
ORDERING INFORMATION  
Ordering Number  
Halogen Free  
Pin Assignment  
Package  
Packing  
Lead Free  
-
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
1N60G-AA3-R  
1N60G-TA3-T  
1N60G-TF2-T  
1N60G-TF3-T  
1N60G-TM3-T  
1N60G-TMS-T  
1N60G-TMS2-T  
1N60G-TMS4-T  
1N60G-TN3-R  
1N60G-TND-R  
1N60G-T60-K  
1N60G-T92-B  
1N60G-T92-K  
D: Drain S: Source  
SOT-223  
TO-220  
Tape Reel  
Tube  
G
G
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
D
D
1N60L-TA3-T  
1N60L-TF2-T  
1N60L-TF3-T  
1N60L-TM3-T  
1N60L-TMS-T  
1N60L-TMS2-T  
1N60L-TMS4-T  
1N60L-TN3-R  
1N60L-TND-R  
1N60L-T60-K  
1N60L-T92-B  
1N60L-T92-K  
TO-220F2  
TO-220F  
TO-251  
Tube  
Tube  
Tube  
TO-251S  
TO-251S2  
TO-251S4  
TO-252  
Tube  
Tube  
Tube  
Tape Reel  
Tape Reel  
Bulk  
TO-252D  
TO-126  
TO-92  
Tape Box  
Bulk  
TO-92  
Note: Pin Assignment: G: Gate  
MARKING  
PACKAGE  
MARKING  
SOT-223  
TO-220  
TO-220F  
TO-220F2  
TO-251  
TO-251S2  
TO-251S4  
TO-252  
TO-252D  
TO-251S  
TO-126  
TO-92  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 7  
QW-R502-052.N  
www.unisonic.com.tw  
1N60  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
IAR  
RATINGS  
600  
±30  
1.2  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
Avalanche Current (Note 2)  
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
A
ID  
1.2  
A
IDM  
4.8  
A
Single Pulsed (Note 3)  
Repetitive (Note 2)  
EAS  
50  
mJ  
mJ  
V/ns  
Avalanche Energy  
EAR  
4.0  
Peak Diode Recovery dv/dt (Note 4)  
SOT-223  
dv/dt  
4.5  
8
TO-251/TO-252  
TO-252D/TO-251S  
TO-251S2/ TO-251S4  
TO-220  
28  
40  
21  
Power Dissipation  
PD  
W
TO-220F  
TO-220F2  
23  
TO-92(TA=25°С)  
TO-126  
1
12.5  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
-55 ~ +150  
°С  
°С  
°С  
TOPR  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature  
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25, Starting TJ = 25°C  
4. ISD 1.2A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
150  
UNIT  
SOT-223  
TO-251/TO-252  
TO-252D/TO-251S  
TO-251S2/ TO-251S4  
TO-220/TO-220F  
TO-220F2  
110  
Junction to Ambient  
θJA  
°С/W  
62.5  
62.5  
140  
132  
14  
TO-92  
TO-126  
SOT-223  
TO-251/TO-252  
TO-252D/TO-251S  
TO-251S2/ TO-251S4  
TO-220  
4.53  
3.13  
5.95  
5.43  
80  
Junction to Case  
θJc  
°С/W  
TO-220F  
TO-220F2  
TO-92  
TO-126  
10  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 7  
QW-R502-052.N  
www.unisonic.com.tw  
1N60  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC=25, unless otherwise specified.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS=0V, ID=250μA  
600  
V
10 μA  
100 nA  
-100 nA  
V/  
VDS=600V, VGS=0V  
VGS=30V, VDS=0V  
VGS=-30V, VDS=0V  
Forward  
Reverse  
Gate-Source Leakage Current  
IGSS  
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA  
0.4  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250μA  
2.0  
4.0  
9.3 11.5  
V
VGS=10V, ID=0.6A  
CISS  
COSS  
CRSS  
120 150 pF  
20 25 pF  
3.0 4.0 pF  
Output Capacitance  
VDS=25V, VGS=0V, f=1MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
5
25  
7
20  
60  
25  
60  
ns  
ns  
ns  
ns  
Turn-On Rise Time  
VDD=300V, ID=1.2A, RG=50Ω  
(Note 2,3)  
Turn-Off Delay Time  
Turn-Off Fall Time  
25  
Total Gate Charge  
QG  
5.0 6.0 nC  
VDS=480V, VGS=10V, ID=1.2A  
(Note 2,3)  
Gate-Source Charge  
QGS  
QGD  
1.0  
2.6  
nC  
nC  
Gate-Drain Charge  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS=0V, IS =1.2A  
1.4  
1.2  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
4.8  
A
Reverse Recovery Time  
trr  
160  
0.3  
ns  
VGS=0V, IS=1.2A  
dIF/dt=100A/μs (Note 1)  
Reverse Recovery Charge  
QRR  
μC  
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature  
2. Pulse Test: Pulse Width 300μs, Duty Cycle2%  
3. Essentially Independent of Operating Temperature  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 7  
QW-R502-052.N  
www.unisonic.com.tw  
1N60  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
(D.U.T.)  
VDD  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 7  
QW-R502-052.N  
www.unisonic.com.tw  
1N60  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Switching Test Circuit  
Switching Waveforms  
Gate Charge Test Circuit  
Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
RD  
VDD  
ID(t)  
VDS(t)  
VDD  
10V  
D.U.T.  
tp  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 7  
QW-R502-052.N  
www.unisonic.com.tw  
1N60  
Power MOSFET  
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 7  
QW-R502-052.N  
www.unisonic.com.tw  

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