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1N60G-X-T92-B [UTC]

1.2 Amps, 600/650 Volts N-CHANNEL MOSFET; 1.2安培， 600/650伏特N沟道MOSFET
1N60G-X-T92-B
型号： 1N60G-X-T92-B
厂家： Unisonic Technologies    Unisonic Technologies
描述：

1.2 Amps, 600/650 Volts N-CHANNEL MOSFET
1.2安培， 600/650伏特N沟道MOSFET
文件： 总6页 (文件大小：270K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
1N60  
Power MOSFET  
1.2 Amps, 600/650 Volts  
N-CHANNEL MOSFET  
1
1
SOT-223  
TO-92  
„
DESCRIPTION  
The UTC 1N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged  
avalanche characteristics. This power MOSFET is usually used at  
high speed switching applications in power supplies, PWM motor  
controls, high efficient DC to DC converters and bridge circuits.  
1
1
TO-220  
TO-251  
TO-220F  
1
„
FEATURES  
1
1
* RDS(ON) =11.5Ω@VGS = 10V.  
TO-252  
* Ultra Low gate charge (typical 5.0nC)  
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
TO-126  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
1N60L-x-AA3-R  
1N60L-x-T92-B  
1N60L-x-T92-K  
1N60L-x-TA3-T  
1N60L-x-TF3-T  
1N60L-x-TM3-T  
1N60L-x-TN3-R  
1N60L-x-TN3-T  
1N60L-x-T60-K  
1N60G-x-AA3-R  
1N60G-x-T92-B  
1N60G-x-T92-K  
1N60G-x-TA3-T  
1N60G-x-TF3-T  
1N60G-x-TM3-T  
1N60G-x-TN3-R  
1N60G-x-TN3-T  
1N60G-x-T60-K  
SOT-223  
TO-92  
Tape Reel  
Tape Box  
Bulk  
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
S
S
S
S
S
S
S
S
S
TO-92  
TO-220  
TO-220F  
TO-251  
TO-252  
TO-252  
TO-126  
Tube  
Tube  
Tube  
Tape Reel  
Tube  
Bulk  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 6  
Copyright © 2010 Unisonic Technologies Co., Ltd  
QW-R502-052,I  
1N60  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
UNIT  
V
1N60-A  
1N60-B  
600  
Drain-Source Voltage  
Gate-Source Voltage  
650  
V
VGSS  
IAR  
±30  
V
Avalanche Current (Note 1)  
Continuous Drain Current  
Pulsed Drain Current (Note 1)  
1.2  
A
ID  
1.2  
A
IDM  
4.8  
A
Single Pulsed (Note 2)  
Repetitive (Note 1)  
EAS  
EAR  
dv/dt  
50  
mJ  
mJ  
V/ns  
W
W
W
W
W
W
W
℃
Avalanche Energy  
4.0  
Peak Diode Recovery dv/dt (Note 3)  
4.5  
SOT-223  
TO-251  
1
28  
TO-252  
28  
40  
Power Dissipation  
PD  
TO-220  
TO-220F  
TO-92(Ta=25℃)  
21  
1
TO-126  
12.5  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
-55 ~ +150  
℃
℃
TOPR  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
150  
UNIT  
SOT-223  
TO-251  
TO-252  
TO-220  
TO-220F  
TO-92  
110  
110  
62.5  
62.5  
140  
132  
14  
Junction-to-Ambient  
Junction-to-Case  
θJA  
℃/W  
TO-126  
SOT-223  
TO-251  
TO-252  
TO-220  
TO-220F  
TO-126  
4.53  
4.53  
3.13  
5.95  
10  
θJc  
℃/W  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R502-052,I  
www.unisonic.com.tw  
1N60  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
1N60-A  
1N60-B  
600  
650  
V
V
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
BVDSS  
IDSS  
VGS=0V, ID=250μA  
VDS=600V, VGS=0V  
VGS=30V, VDS=0V  
10 μA  
100 nA  
-100 nA  
Forward  
Reverse  
IGSS  
VGS=-30V, VDS=0V  
Breakdown Voltage Temperature  
Coefficient  
△BVDSS/△TJ ID=250μA  
0.4  
V/℃  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250μA  
2.0  
4.0  
9.3 11.5  
V
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS=10V, ID=0.6A  
Ω
CISS  
COSS  
CRSS  
120 150 pF  
20 25 pF  
3.0 4.0 pF  
VDS=25V, VGS=0V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
5
25  
7
20  
60  
25  
60  
ns  
ns  
ns  
ns  
Turn-On Rise Time  
VDD=300V, ID=1.2A, RG=50Ω  
(Note 4,5)  
Turn-Off Delay Time  
Turn-Off Fall Time  
25  
Total Gate Charge  
QG  
5.0 6.0 nC  
V
DS=480V, VGS=10V, ID=1.2A  
Gate-Source Charge  
QGS  
QGD  
1.0  
2.6  
nC  
nC  
(Note 4,5)  
Gate-Drain Charge  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS=0V, IS =1.2A  
1.4  
1.2  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
4.8  
A
Reverse Recovery Time  
tRR  
VGS=0V, IS=1.2A  
dIF/dt=100A/μs (Note1)  
160  
0.3  
ns  
Reverse Recovery Charge  
QRR  
μC  
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature  
2. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C  
3. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  
4. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%  
5. Essentially Independent of Operating Temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
www.unisonic.com.tw  
QW-R502-052,I  
1N60  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R502-052,I  
www.unisonic.com.tw  
1N60  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
RD  
VDD  
ID(t)  
VDS(t)  
VDD  
10V  
D.U.T.  
tp  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
www.unisonic.com.tw  
QW-R502-052,I  
1N60  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
www.unisonic.com.tw  
QW-R502-052,I  

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