1N80 [UTC]
1A, 800V N-CHANNEL POWER MOSFET; 1A ， 800V N沟道功率MOSFET
| 型号： | 1N80 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 1A, 800V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N80
Preliminary
Power MOSFET
1A, 800V N-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 1N80 is an N-channel mode power MOSFET using
1
1
UTC’s advanced technology to provide costomers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
TO-220F
The UTC 1N80 is universally applied in high efficiency switch mode
power supply.
TO-220F1
FEATURES
* RDS(on)=13.5Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
1N80L-TA3-T
1N80L-TF3-T
1N80L-TF1-T
1N80G-TA3-T
1N80G-TF3-T
1N80G-TF1-T
TO-220
TO-220F
TO-220F1
G
G
G
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-491.b
1N80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 1)
1.0
A
Continuous
ID
1.0
A
Drain Current
Pulsed (Note 1)
IDM
4.0
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
90
mJ
mJ
V/ns
Avalanche Energy
EAR
4.5
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
TO-220
39
Power Dissipation
PD
W
TO-220F/TO-220F1
23
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD= 50V, RG=25ꢀ, Starting TJ=25°C
3. ISD ≤1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
Junction to Case
θJA
TO-220
3.13
θJC
°C/W
TO-220F/TO-220F1
5.35
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1N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
800
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
1.0
VDS=800V, VGS=0V
10
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
VDS=640V, TC=125°C
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
100
100
-100
µA
Forward
Reverse
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
ꢀ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=10V, ID=0.5A
11
13.5
gFS
VDS=50V, ID=0.5A (Note 1)
0.75
CISS
COSS
CRSS
150
20
195
26
pF
pF
pF
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
2.7
3.5
QG
QGS
QGD
tD(ON)
tR
5.5
1.1
3.3
10
7.2
nC
nC
nC
ns
ns
ns
ns
VDS=640V, VGS=10V, ID=1.0A
Gate-Source Charge
(Note 1,2)
Gate-Drain Charge
Turn-ON Delay Time
30
60
40
60
Turn-ON Rise Time
VDD=400V, ID=1.0A, RG=25ꢀ
(Note 1,2)
25
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
15
25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
1.0
4.0
1.4
A
A
ISM
VSD
tRR
IS =1.0A, VGS=0V
V
VGS=0V, IS=1.0A,
dIF/dt=100A/μs (Note 1)
300
0.6
ns
μC
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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1N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
(Driver
10V
)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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1N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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5 of 6
QW-R502-491.b
1N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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