20N40KL-TF2-T [UTC]

N-CHANNEL POWER MOSFET;


型号：	20N40KL-TF2-T
厂家：	Unisonic Technologies
描述：	N-CHANNEL POWER MOSFET
文件：	总5页 (文件大小：192K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

20N40K-MT

Preliminary

Power MOSFET

20A, 400V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 20N40K-MT is an N-channel mode power MOSFET

using UTC’s advanced technology to provide customers with planar

stripe and DMOS technology. This technology allows a minimum

on-state resistance and superior switching performance. It also can

withstand high energy pulse in the avalanche and commutation

mode.

The UTC 20N40K-MT is generally applied in high efficiency

switch mode power supplies.



FEATURES

* R_DS(ON)< 0.22Ω @ V_GS= 10V, I_D= 10A

* High Switching Speed



SYMBOL

2.Drain

1.Gate

3.Source

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Tube

Lead Free

Halogen Free

20N40KG-TF2-T

D: Drain S: Source

20N40KL-TF2-T

TO-220F2

Note: Pin Assignment: G: Gate

20N40KL-TF2-T

(1) T: Tube

(1)Packing Type

(2)Package Type

(3)Green Package

(2) TF2: TO-220F2

(3) L: Lead Free, G: Halogen Free and Lead Free



MARKING

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Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

400

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

T_C=25°C

Drain Current

Pulsed (Note 2)

I_DM

Avalanche Current (Note 2)

Avalanche Energy Single Pulsed (Note 3)

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation (T_C=25°C)

Derate above 25°C

I_AR

E_AS

1000

4.5

V/ns

dv/dt

P_D

0.35

+150

-55~+150

W/°C

°C

Junction Temperature

T_J

Storage Temperature

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 5.01mH, I_AS= 20A, V_DD= 50V, R_G= 25ꢀ, Starting T_J= 25°C

4. I_SD≤ 20A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

62.5

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

2.8



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_D=250µA, V_GS=0V

400

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JReference to 25°C, I_D=250µA

0.5

V/°C

µA

Drain-Source Leakage Current

I_DSS

V_DS=400V, V_GS=0V

V_GS=+30V, V_DS=0V

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=10A

2.0

4.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.15 0.22

ꢀ

C_ISS

C_OSS

C_RSS

1170

300

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Turn-ON Delay Time

11.9

t_D(ON)

t_R

t_D(OFF)

t_F

110

190

372

200

Rise Time

V_DS=30V, I_D=0.5A, R_G=25ꢀ

(Note 1, 2)

Turn-OFF Delay Time

Fall-Time

Total Gate Charge at 10V

Gate to Source Charge

Gate to Drain Charge

Q_G(TOT)

Q_GS

Q_GD

V_GS=10V, V_DS=50V, I_D=1.3A

(Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

I_S

I_SM

V_SD

I_SD=23A, V_GS=0V

1.5

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially Independent of Operating Temperature Typical Characteristics

UNISONIC TECHNOLOGIES CO., LTD

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20N40K-MT

Preliminary

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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20N40K-MT

Preliminary

Power MOSFET



TEST CIRCUITS AND WAVEFORMS (Cont.)

V_DS

90%

10%

V_GS

t_D(ON)

t_D(OFF)

t_F

t_R

Switching Test Circuit

Switching Waveforms

V_GS

Q_G

10V

Q_GS

Q_GD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BV_DSS

I_AS

I_D(t)

V_DS(t)

V_DD

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

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20N40K-MT

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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