2N5401G-B-T92-A-B [UTC]
Small Signal Bipolar Transistor;型号: | 2N5401G-B-T92-A-B |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor 开关 晶体管 |
文件: | 总4页 (文件大小:219K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N5401
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* Collector-emitter voltage:
CEO = -150V
* High current gain,
V
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
E
E
E
E
2
C
B
B
C
C
3
E
C
C
B
B
2N5401L-x-AB3-R
2N5401L-x-T92-B
2N5401L-x-T92-K
2N5401L-x-T92-A-B
2N5401L-x-T92-A-K
2N5401G-x-AB3-R
2N5401G-x-T92-B
2N5401G-x-T92-K
2N5401G-x-T92-A-B
2N5401G-x-T92-A-K
SOT-89
TO-92
TO-92
TO-92
TO-92
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING INFORMATION
PACKAGE
MARKING
SOT-89
TO-92
www.unisonic.com.tw
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R201-001.F
2N5401
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C , unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-160
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-150
V
-5
V
-600
mA
mW
mW
C
SOT-89
TO-92
500
Collector Dissipation
PC
625
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC = -100μA, IE = 0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-160
-150
-5
V
V
IC = -1mA, IB = 0
IE = -10μA, IC = 0
V
VCB = -120V, IE = 0
VEB = -3V, IC = 0
-50
-50
nA
nA
Emitter Cut-off Current
IEBO
hFE1
VCE = -5V, IC = -1mA
VCE = -5V, IC = -10mA
VCE = -5V, IC = -50mA
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
80
80
80
DC Current Gain (Note)
hFE2
400
hFE3
-0.2
-0.5
-1
V
V
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
-1
V
CE = -10V, IC = -10mA
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
fT
100
400 MHz
f = 100MHz
COB
NF
VCB = -10V, IE = 0, f = 1MHz
IC = -0.25mA, VCE = -5V
RS = 1k, f = 10Hz ~ 15.7kHz
6.0
8
pF
dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-001.F
www.unisonic.com.tw
2N5401
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECNOLOGO., LTD
3 of 4
QW-R201-001.F
www.unisonic.cm.tw
2N5401
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-001.F
www.unisonic.com.tw
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