2N5401G-B-T92-K [UTC]

Small Signal Bipolar Transistor;


型号：	2N5401G-B-T92-K
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor 开关晶体管
文件：	总4页 (文件大小：253K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2N5401

PNP SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING

TRANSISTOR



FEATURES

* Collector-emitter voltage:

_CEO= -150V

* High current gain,



ORDERING INFORMATION

Ordering Number

Halogen Free

Pin Assignment

Packing

Package

Lead Free

2N5401G-x-AB3-R

2N5401G-x-T92-B

2N5401G-x-T92-K

2N5401G-x-T92-A-B

2N5401G-x-T92-A-K

SOT-89

TO-92

Tape Reel

Tape Box

Bulk

2N5401L-x-T92-B

2N5401L-x-T92-K

2N5401L-x-T92-A-B

2N5401L-x-T92-A-K

Tape Box

Bulk

Note: Pin Assignment: B: Base

C: Collector

E: Emitter



MARKING

SOT-89

TO-92

www.unisonic.com.tw

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PNP SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING (T_A=25C , unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-160

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-150

-5

-600

C

SOT-89

TO-92

500

Collector Dissipation

P_C

625

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

T_STG

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_A=25C, unless otherwise specified)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C= -100μA, I_E= 0

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

-160

-150

-5

I_C= -1mA, I_B= 0

I_E= -10μA, I_C= 0

V_CB= -120V, I_E= 0

V_EB= -3V, I_C= 0

-50

Emitter Cut-off Current

I_EBO

h_FE1

V_CE= -5V, I_C= -1mA

V_CE= -5V, I_C= -10mA

V_CE= -5V, I_C= -50mA

I_C= -10mA, I_B= -1mA

I_C= -50mA, I_B= -5mA

I_C= -10mA, I_B= -1mA

I_C= -50mA, I_B= -5mA

DC Current Gain (Note)

h_FE2

400

h_FE3

-0.2

-0.5

-1

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

V_BE(SAT)

-1

_CE= -10V, I_C= -10mA

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

f_T

100

400 MHz

f = 100MHz

C_OB

V_CB= -10V, I_E= 0, f = 1MHz

I_C= -0.25mA, V_CE= -5V

R_S= 1k, f = 10Hz ~ 15.7kHz

6.0

Note: Pulse test: P_W< 300μs, Duty Cycle < 2%.



CLASSIFICATION OF h_FE2

RANK

RANGE

80-170

150-240

200-400

UNISONIC TECHNOLOGIES CO., LTD

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2N5401

PNP SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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2N5401

PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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