2N5551-A-T92-R [UTC]

HIGH VOLTAGE SWITCHING TRANSISTOR; 高电压开关晶体管


型号：	2N5551-A-T92-R
厂家：	Unisonic Technologies
描述：	HIGH VOLTAGE SWITCHING TRANSISTOR 高电压开关晶体管晶体开关晶体管高压
文件：	总4页 (文件大小：53K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2N5551

NPN SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING

TRANSISTOR

ꢀ

FEATURES

SOT-89

* High collector-emitter voltage:

_CEO=160V

* High current gain

ꢀ

APPLICATIONS

TO-92

Telephone switching circuit

* Amplifier

*Pb-free plating product number: 2N5551L

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

2N5551L-x-AB3-R

2N5551L-x-T92-B

2N5551L-x-T92-K

2N5551-x-AB3-R

2N5551-x-T92-B

2N5551-x-T92-K

SOT-89

TO-92

Tape Reel

Tape Box

Bulk

2N5551L-x-AB3-R

(1)Packing Type

(1) B: Tape Box, K: Bulk, R: Tape Reel

(2) T92: TO-92, AB3: SOT-89

(2)Package Type

(3)Rank

(3) x: refer to Classification of h_FE

(4) L: Lead Free Plating, Blank: Pb/Sn

(4)Lead Plating

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2N5551

NPN SILICON TRANSISTOR

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ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

RATINGS

180

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation

Collector Current

V_CEO

160

V_EBO

TO-92

625

℃

P_C

SOT-89

500

I_C

T_J

600

Junction Temperature

Storage Temperature

+150

-55 ~ +150

T_STG

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage BV_CEOI_C=1mA, I_B=0

SYMBOL

TEST CONDITIONS

MIN

180

160

TYP

MAX

UNIT

BV_CBOI_C=100µA, I_E=0

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

BV_EBOI_E=10µA, I_C=0

I_CBO

I_EBO

h_FE1

h_FE2

h_FE3

V_CB=120V, I_E=0

V_BE=4V,I_C=0

V_CE=5V, I_C=1mA

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

DC Current Gain(Note)

160

400

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.15

0.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_BE(SAT)

Current Gain Bandwidth Product

Output Capacitance

f_T

V_CE=10V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0 f=1MHz

I_C=0.25mA, V_CE=5V

R_S=1kΩ, f=10Hz ~ 15.7kHz

100

300

6.0

MHz

C_ob

Noise Figure

Note: Pulse test: PW<300µs, Duty cycle<2%

ꢀ

CLASSIFICATION OF h_FE

RANK

RANGE

80-170

150-240

200-400

UNISONIC TECHNOLOGIES CO., LTD

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2N5551

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

CollectorOutput Capacitance

DC Current Gain

V_CE=5V

10³

10²

f=1MHz

I_E=0

10¹

10⁰

10¹

10²

10^-1

10⁰

10¹

10²

10³

10⁰

Collector-Base Voltage (V)

CollectorCurrent, I_C(mA)

Saturation Voltage

Base-Emitter on Voltage

10³

10²

10¹

10⁰

I_C=10*I_B

V_CE=5V

V_BE(SAT)

10^-1

10^-2

10¹

10⁰

V_CE(SAT)

0.2

0.4

0.6

0.8 1.0

10^-1

10⁰

10¹

10²

10³

Collector Current, I_C(mA)

Base-Emitter Voltage (V)

Current Gain-Bandwidth Product

10³

10²

V_CE=10V

10¹

10⁰

10¹

10²

10³

Collector Current, I_C(mA)

UNISONIC TECHNOLOGIES CO., LTD

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2N5551

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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