2N60-B-TN3-R [UTC]
Transistor;
| 型号： | 2N60-B-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：380K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N60
Power MOSFET
2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 5Ω@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
Lead-free:
Halogen-free: 2N60G
2N60L
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
2N60L-x-TA3-T
2N60L-x-TF3-T
2N60L-x-TM3-T
2N60L-x-TN3-R
2N60L-x-TN3-T
Halogen Free
2N60G-x-TA3-T
2N60G-x-TF3-T
2N60G-x-TM3-T
2N60G-x-TN3-R
2N60G-x-TN3-T
1
2
3
S
S
S
S
S
2N60-x-TA3-T
2N60-x-TF3-T
2N60-x-TM3-T
2N60-x-TN3-R
2N60-x-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
G
G
G
G
G
D
D
D
D
D
Tube
Tube
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
600
UNIT
V
2N60-A
2N60-B
Drain-Source Voltage
Gate-Source Voltage
650
V
VGSS
IAR
±30
V
Avalanche Current (Note 1)
Drain Current Continuous
Drain Current Pulsed (Note 1)
2.0
A
ID
2.0
A
IDP
8.0
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
EAR
dv/dt
140
mJ
mJ
V/ns
W
Avalanche Energy
4.5
Peak Diode Recovery dv/dt (Note 3)
4.5
TO-220
TO-220F
TO-251
TO-252
54
23
W
Total Power Dissipation
PD
44
W
44
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
℃
℃
℃
TOPR
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
PACKAGE
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
SYMBOL
RATINGS
62.5
62.5
50
UNIT
Junction-to-Ambient
Junction-to-Case
θJA
℃/W
50
2.32
5.5
℃/W
θJc
2.87
2.87
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
2N60-A
2N60-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
10
μA
Forward
Reverse
100 nA
-100 nA
IGSS
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
0.4
3.8
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID =1A
Ω
CISS
COSS
CRSS
270 350 pF
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
40
5
50
7
pF
pF
Reverse Transfer Capacitance
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QW-R502-053,H
2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD (ON)
tR
tD(OFF)
tF
10
25
30
60
50
60
11
ns
ns
VDD =300V, ID =2.4A, RG=25Ω
(Note 4, 5)
Turn-Off Delay Time
Turn-Off Fall Time
20
ns
25
ns
Total Gate Charge
QG
9.0
1.6
4.3
nC
nC
nC
VDS=480V, VGS=10V, ID=2.4A
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
(Note 4, 5)
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
VSD
ISD
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
ISM
A
Reverse Recovery Time
tRR
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note4)
180
ns
μC
Reverse Recovery Charge
QRR
0.72
Note: 1. Repetitive Rating : Pulse width limited by TJ
2. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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QW-R502-053,H
2N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-053,H
2N60
Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R502-053,H
2N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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QW-R502-053,H
2N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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