2N6099 [UTC]

COMPLEMENTARY SILICON TRANSISTORS; 互补硅晶体管
2N6099
型号: 2N6099
厂家: Unisonic Technologies    Unisonic Technologies
描述:

COMPLEMENTARY SILICON TRANSISTORS
互补硅晶体管

晶体 晶体管 局域网
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UTC2N3773/2N6099  
POWER TRANSISTOR  
COMPLEMENTARY SILICON  
TRANSISTORS  
The 2N3773/2N6099 are power-base power transistors  
designed for high power audio, disk head positions and  
other linear applications. These device can be used in  
power switching circuits such as relay or solened drivers,  
DC to DC converters or inverts.  
FEATURES  
*High safe operating area(100 tested)  
150W and 100V  
*Complement Characterized for linear operation  
*High DC Current Gain and low saturation voltage  
Hfe=15(8A 4V)  
TO-3  
Vce(sat)=1.4V(Ic=8A,Ib=0.8A)  
*For Low Distortion Complementary Designs  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )  
PARAMETERS  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
VCEX  
Pc  
VALUE  
160  
140  
7
UNITS  
V
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector-emitter voltage  
Total Power dissipation  
Tc=25°C  
Dertate above 25°C  
Collector current  
continuous  
160  
150  
0.855  
W
W/°C  
Ic  
IB  
16  
30  
A
A
Peak  
Base current  
continuous  
4
15  
A
A
Peak  
Thermal resistance Junction to Case  
Storage Temperature  
RθJC  
TSTG  
1.17  
-65 ~ +200  
°C/W  
°C  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R205-001,A  
UTC2N3773/2N6099  
POWER TRANSISTOR  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
BVCBO  
BVCEX  
Ic=0.2A,Ib=0  
Ic=0.1A,Vbe(OFF)=1.5V  
Rbe=100Ω  
140  
160  
V
V
Collector-Emitter Sustaining Voltage  
BVCER  
Ic=0.1A  
Rbe=100Ω  
150  
V
Collector Cut-off Current  
Emitter Cut-off Current  
Collector Cut-off Current  
ICBO  
IEBO  
ICEX  
VCB=140V,IE=0  
VBE=7V,Ic=0  
VCE=140V,VBE(off)=1.5V  
VCE=140V,VBE(off)=1.5V  
,Tc=150°C  
2
5
mA  
mA  
mA  
2
10  
mA  
OFF CHARACTERISTICS  
DC current gain(note)  
hFE1  
hFE2  
VCE(sat)  
VCE=4V,Ic=8A  
VCE=4V,Ic=16A  
Ic=8A,IB=800mA  
Ic=16A,IB=3.2A  
Ic=8A, VCE=4V  
15  
5
60  
Collector-emitter saturation voltage  
1.4  
4
2.2  
V
V
Base-emitter saturation voltage  
DYNAMIC CHARACTERISTICS  
Small Signal Current Gain  
Magnitade of commom-Emitter  
small signal,short circuit forward  
current transfer ratio  
VBE(on)  
hFE  
|hFE|  
Ic=1A,VCE=4V,f=1kHz  
Ic=1A,f=50kHz  
40  
4
Second breakdown collector with  
Is/b  
t=1s(non-repetive),VCE=100V  
1.5  
A
base forward biased  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R205-001,A  
UTC2N3773/2N6099  
POWER TRANSISTOR  
TYPICAL PARAMETERS PERFORAMCES  
2N3773  
2N6609  
Figure 1 DC current gain  
Figure 2 DC current gain  
1000  
1000  
VCE=4V  
VCE=4V  
10  
0
10  
0
150°C  
-55°C  
25°C  
25°C  
-55°C  
10  
10  
150°C  
1
1
0.1  
1
10  
100  
0.1  
1
10  
100  
Collector Current (A)  
Collector Current (A)  
Figure 3 Collecor saturation  
region  
Figure 4 Collecor saturation  
region  
2.0  
1.6  
2.0  
1.6  
Ta=25°C  
Ic=16A  
Ta=25°C  
Ic=16A  
1.2  
0.8  
1.2  
0.8  
Ic=8A  
Ic=4A  
Ic=8A  
Ic=4A  
0.4  
0
0.4  
0
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
Base current (A)  
Base current (A)  
Figure 5 "ON" Voltage  
Ic/Ib=10  
Figure 6 "ON" Voltage  
Ic/Ib=10  
2.0  
1.6  
2.0  
1.6  
V
BE(sat)  
V
BE(sat)  
1.2  
0.8  
1.2  
0.8  
Ta=25°C  
Ta=25°C  
Ta=150°C  
Ta=25°C  
VCE(sat)  
Ta=150°C  
Ta=25°C  
0.4  
0
0.4  
0
V
CE(sat)  
Ta=150°C  
Ta=150°C  
0.1  
1
10  
100  
0.1  
1
10  
100  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R205-001,A  
UTC2N3773/2N6099  
POWER TRANSISTOR  
Figure 7 Turn-on Switching  
Figure 8 Turn-off Switching  
times  
times  
10  
10  
1
2N3773  
2N6609  
Ta=25°C  
Ic/Ib=10  
VCE=30V  
Ts  
1
Tr  
Tf  
0.1  
0.1  
Ta=25°C  
Ic/Ib=10  
Ib1=Ib2  
Td  
VCE=30V  
0.01  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
Collector Current (A)  
Collector Current (A)  
Figure 9 Current gain -  
bandwidth product  
Figure 10 Capacitances  
1.0  
0.8  
10000  
1000  
Ta=25°C  
Cib  
0.6  
0.4  
Ta=25°C  
Cob  
100  
10  
0.2  
0
0.1  
1
10  
1
10  
100  
Collector Current (A)  
Base current (A)  
Figure 11 Thermal response  
1
0.5  
Duty Cycle,  
Q=t1/t2  
0.2  
0.1  
0.05  
0.02  
0.1  
0.01  
t1  
Single pulse  
t2  
0.01  
0.01  
0.1  
1
10  
100  
1000  
10000  
Time(ms)  
4
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R205-001,A  
UTC2N3773/2N6099  
POWER TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
5
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R205-001,A  

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