2N60G-X-TN3-R [UTC]
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET; 2安培， 600/650伏特N沟道功率MOSFET
| 型号： | 2N60G-X-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N60
Power MOSFET
2 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
1
1
TO-220
TO-220F1
TO-251
TO-220F
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
1
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-262
1
1
FEATURES
TO-252
* RDS(ON) = 5Ω@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
1
1
* Avalanche energy specified
TO-251L
TO-126
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
2N60L-x-TA3-T
2N60L-x-TF1-T
2N60L-x-TF3-T
2N60L-x-TM3-T
2N60L-x-TMA-T
2N60L-x-TN3-R
2N60L-x-T2Q-T
2N60L-x-T60-K
2N60G-x-TA3-T
2N60G-x-TF1-T
2N60G-x-TF3-T
2N60G-x-TM3-T
2N60G-x-TMA-T
2N60G-x-TN3-R
2N60G-x-T2Q-T
2N60G-x-T60-K
TO-220
TO-220F1
TO-220F
TO-251
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
TO-251L
TO-252
Tube
Tape Reel
Tube
TO-262
TO-126
Bulk
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
1 of 6
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-053,Ma
2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
600
UNIT
V
2N60-A
2N60-B
Drain-Source Voltage
650
V
Gate-Source Voltage
VGSS
IAR
±30
V
Avalanche Current (Note 2)
2.0
A
Continuous
Pulsed (Note 2)
ID
2.0
A
Drain Current
IDM
8.0
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
dv/dt
140
mJ
mJ
V/ns
W
Avalanche Energy
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220
4.5
54
TO-220F/TO-220F1
23
W
PD
Power Dissipation
TO-251/TO-251L/TO-252
TO-262
44
W
(TC = 25°С)
54
W
TO-126
40
W
Junction Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
Ambient Operating Temperature
Storage Temperature
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220
PACKAGE
SYMBOL
RATINGS
62.5
62.5
100
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-262
Junction to Ambient
θJA
62.5
89
TO-126
TO-220
2.32
5.5
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-262
Junction to Case
θJc
2.87
2.32
3.12
TO-126
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-053,Ma
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2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
2N60-A
2N60-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
10
μA
Forward
Reverse
100 nA
-100 nA
IGSS
VGS = -30V, VDS = 0V
ID = 250 μA, Referenced to
25°C
Breakdown Voltage Temperature Coefficient
△BVDSS/△TJ
0.4
3.8
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID =1A
Ω
CISS
COSS
CRSS
270 350 pF
V
DS =25V, VGS =0V,f =1MHz
DD =300V, ID =2.4A,
Output Capacitance
40
5
50
7
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
tR
tD(OFF)
tF
10
25
30
60
50
60
11
ns
ns
V
Turn-On Rise Time
RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
20
ns
Turn-Off Fall Time
25
ns
Total Gate Charge
QG
9.0
1.6
4.3
nC
nC
nC
VDS=480V, VGS=10V,
ID=2.4A
(Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
VSD
ISD
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
ISM
A
tRR
VGS = 0 V, ISD = 2.4A,
180
ns
μC
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
QRR
0.72
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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2N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
P.W.
D=
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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2N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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