2N6718-B-T92-B [UTC]

NPN GENERAL PLANAR TRANSISTOR; 一般NPN平面晶体管


型号：	2N6718-B-T92-B
厂家：	Unisonic Technologies
描述：	NPN GENERAL PLANAR TRANSISTOR 一般NPN平面晶体管晶体晶体管局域网
文件：	总4页 (文件大小：100K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2N6718

NPN SILICON TRANSISTOR

NPN GENERAL PLANAR

TRANSISTOR

SOT-89

ꢀ

DESCRIPTION

The UTC 2N6718 is designed for general purpose medium

power amplifier and switching applications.

TO-126C

ꢀ

FEATURES

* High Power: 850mW

* High Current: 1A

TO-92

*Pb-free plating product number: 2N6718L

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

2N6718-x-AB3-R

2N6718-x-T6C-K

2N6718-x-T92-B

2N6718-x-T92-K

2N6718-x-AB3-R

2N6718-x-T6C-K

2N6718-x-T92-B

2N6718-x-T92-K

SOT-89

TO-126C

TO-92

Tape Reel

Bulk

Tape Box

Bulk

TO-92

2N6718L-x-AB3-R

(1)Packing Type

(2)Package Type

(1) B: Tape Box, K: Bulk, R: Tape Reel

(2) AB3: SOT-89, T6C: TO-126C, T92: TO-92

(3)Rank

(3) x: refer to Classification of h

FE2

(4)Lead Plating

(4) L: Lead Free Plating, Blank: Pb/Sn

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2N6718

NPN SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

100

Collector-Emitter Voltage

Emitter-Base Voltage

100

Collector Current (Continue)

Collector Current (Pulse)

I_C

SOT-89

0.5

℃

Total Power Dissipation

P_D

TO-126C

TO-92

1.6

850

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

T_STG

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL TEST CONDITIONS

BV_CBOI_C=100uA

MIN

100

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (note)

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector Cut-Off Current

BV_CEOI_C=1mA

BV_EBOI_E=10

V_CE(SAT)I_C=350mA, I_B=35mA

350

100

I_CBO

h_FE1

h_FE2

h_FE3

V_CB=80V

V_CE=1V, I_C=50mA

V_CE=1V, I_C=250mA

V_CE=1V, I_C=500mA

DC Current Gain

300

_CE=10V, I_C=50mA,

Current Gain - Bandwidth Product

Output Capacitance

f_T

MHz

f=100MHz

Cob

V_CB=10V, I_E=0, f=1MHz

Note: Pulse test: PulseWidth≤380µs, Duty Cycle≤2%

ꢀ

CLASSIFICATION OF h_FE2

RANK

RANGE

50~115

95~300

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2N6718

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Saturation Voltagevs. Collector

Current

Current Gain vs. Collector Current

1000

100

1000

100

V_CE=10V

V_CE=5V

V_CE=2V

V_CE(SAT)@Ic=10I_B

V_CE=1V

0.1

100

1000 10000

0.1

100

1000 10000

Collector Current, Ic (mA)

CollectorCurrent, Ic (mA)

Saturation Voltage

vs. Collector Current

Collector Output Capacitance

100

10000

1000

Cob

V_BE(SAT)@Ic=10I_B

100

1000 10000

0.1

Collector Current, Ic (mA)

Collector Base Voltage(V)

Cutoff Frequency

vs. Collector Current

Safe Operating Area

1000

1ms

f_T@V_CE=10V

100ms

0.1

0.01

100

Collector Current, Ic(mA)

Forward Voltage, V_CE(V)

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2N6718

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Power Derating

2000

1500

1000

TO-126C

TO-92

SOT-89

500

100

150

200

Ambient Temperature, Ta(℃)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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