2N6718G-A-T6C-K [UTC]
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN;型号: | 2N6718G-A-T6C-K |
厂家: | Unisonic Technologies |
描述: | Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN 局域网 开关 晶体管 |
文件: | 总4页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N6718
NPN SILICON TRANSISTOR
NPN GENERAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2N6718 is designed for general purpose medium
power amplifier and switching applications.
FEATURES
* High Power: 850mW
* High Current: 1A
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free Plating
2N6718L-x-AB3-R
2N6718L-x-T6C-K
2N6718L-x-T92-B
2N6718L-x-T92-K
Halogen Free
1
B
E
E
E
2
3
E
B
B
B
2N6718G-x-AB3-R
2N6718G-x-T6C-K
2N6718G-x-T92-B
2N6718G-x-T92-K
SOT-89
TO-126C
TO-92
C
C
C
C
Tape Reel
Bulk
Tape Box
Bulk
TO-92
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-056.D
2N6718
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
100
100
V
5
V
Collector Current (Continue)
Collector Current (Pulse)
1
2
A
IC
A
SOT-89
TO-126C
TO-92
0.5
W
Total Power Dissipation
PD
1.6
W
850
mW
°C
°C
°C
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-40 ~ +125
-55 ~ +150
TOPR
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (note)
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
BVCBO IC=100uA
BVCEO IC=1mA
100
100
5
V
V
BVEBO IE=10A
VCE(SAT) IC=350mA, IB=35mA
V
350 mV
100 nA
ICBO
hFE1
hFE2
hFE3
fT
VCB=80V
VCE=1V, IC=50mA
80
50
20
50
DC Current Gain
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
300
Current Gain - Bandwidth Product
Output Capacitance
MHz
Cob
20
pF
Note: Pulse test: PulseWidth≤380s, Duty Cycle≤2%
CLASSIFICATION OF hFE2
RANK
A
B
RANGE
50~115
95~300
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-056.D
www.unisonic.com.tw
2N6718
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Saturation Voltage
vs. Collector Current
Collector Output Capacitance
100
10000
1000
10
1
Cob
VBE(SAT)@Ic=10IB
100
100
1
10
100
10
1000 10000
0.1
1
Collector Current, Ic (mA)
Collector Base Voltage (V)
Cutoff Frequency
vs. Collector Current
Safe Operating Area
10
1000
1ms
1
fT@VCE=10V
100ms
1s
0.1
0.01
100
100
1
10
1
10
100
Collector Current, Ic(mA)
Forward Voltage, VCE(V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R201-056.D
www.unisonic.com.tw
2N6718
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Power Derating
2000
1500
1000
TO-126C
TO-92
SOT-89
500
0
50
100
150
200
0
Ambient Temperature, Ta(℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-056.D
www.unisonic.com.tw
相关型号:
©2020 ICPDF网 联系我们和版权申明