2N7002DWG-AL6-R [UTC]
300mA, 60V DUAL N-CHANNEL POWER MOSFET; 300毫安， 60V双N沟道功率MOSFET
| 型号： | 2N7002DWG-AL6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 300mA, 60V DUAL N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N7002DW
Power MOSFET
300mA, 60V DUAL
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002DW uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
.
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-363
Packing
6
Lead Free
Halogen Free
1
2
3
4
5
2N7002DWL-AL6-R
2N7002DWG-AL6-R
Tape Reel
S1 G1 D2 S2 G2 D1
MARKING
3P
G: Halogen Free
L: Lead Free
www.unisonic.com.tw
1 of 6
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-534.C
2N7002DW
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted.)
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60
V
Continuous
±20
±40
300
Gate Source Voltage
Drain Current
VGSS
ID
V
Non Repetitive(tP<50μs)
Continuous
mA
Pulsed
800
Power Dissipation
200
mW
mW/°C
°C
PD
Derated Above 25°C
Junction Temperature
Storage Temperature
1.6
TJ
+ 150
-55 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625 (Note1)
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=10μA
60
1
V
VDS=60V, VGS =0V
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
1
μA
nA
nA
IGSSF
IGSSR
100
-100
Gate-Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID=250μA
GS = 10V, ID=300mA
VGS = 5.0V, ID=50mA
GS=10V, ID=300mA,TJ=125°C
2.1
0.6
2.5
3.75
1.5
V
V
V
Drain-Source On-Voltage
VDS (ON)
0.09
V
13.5
7.5
Ω
Ω
Static Drain-Source On-Resistance
RDS (ON)
VGS =5.0V, ID=50mA
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
20
11
4
50
25
5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
VDD=30V, RL=150Ω
Turn-On Time
tON
ID=200mA, VGS =10V
20
20
nS
nS
RGEN =25Ω
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
Turn-Off Time
tOFF
RGEN =25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
VSD
ISM
VGS=0V, Is=300mA (Note )
0.88
1.5
0.8
V
A
Maximum Continuous Drain-Source
Diode Forward Current
Is
300
mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-534.C
www.unisonic.com.tw
2N7002DW
Power MOSFET
TEST CIRCUIT AND WAVEFORM
VDD
RL
VIN
VOUT
D
VGS
RGEN
DUT
G
S
Fig. 1
tON
tOFF
tD(ON)
tD(OFF)
tR
tF
90%
90%
Output, VOUT
10%
50%
10%
90%
Inverted
Input, VIN
10%
50%
Pulse Width
Fig. 2 Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-534.C
www.unisonic.com.tw
2N7002DW
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance Varisation with Drain
On-Resistance Varisation with Temperature
Current and Temperature
3
2
VGS=10V
VGS=10V
ID=300mA
2.5
1.75
1.5
TJ=125°C
25°C
2
1.25
1
1.5
1
0.5
0
0.75
0.5
-
-
25
0
25
150
0
0.4
1.2
Drain Current,ID (A)
1.6
2
50
50
75 100 125
0.8
Junction Temperature, TJ (°C)
Gate Threshold Varisation with Temperature
Transfer Characteristics
1.1
1.0
0.8
0.6
0.4
VGS = VDS
ID = 1mA
VDS=10V
25°C
125°C
1.05
1
0.95
0.9
0.2
0
0.85
0.8
6
10
25
50
0
2
4
8
-25
0
75 100 125 150
-50
Gate to Source Voltage, VGS (V)
Junction Temperature, TJ (°C)
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-534.C
www.unisonic.com.tw
2N7002DW
Power MOSFET
TYPICAL CHARACTERICS (Cont.)
Body Diode Forward Voltage Varisation
with Temperature
Breakdown Voltage Varisation
with Temperature
2
1
1.1
VGS=0V
ID = 250μA
1.075
1.05
0.5
TJ =125°C
25°C
0.1
1.025
1
0.05
0.01
0.975
0.005
0.95
0.001
0.925
1
1.2
1.4
0.8
-50
150
125
75 100
0.2
0.4
0.6
-25
0
25
50
Body Diode Forward Voltage, VSD (V)
Junction Temperature, TJ (°C)
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-534.C
www.unisonic.com.tw
2N7002DW
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-534.C
www.unisonic.com.tw
相关型号：
2N7002DWH6327XTSA1
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
INFINEON
2N7002DWL6327
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
INFINEON
2N7002DWQ-7-F
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
DIODES
©2020 ICPDF网 联系我们和版权申明