2N70L-TF3-T [UTC]

2 Amps, 700 Volts N-CHANNEL POWER MOSFET; 2安培， 700伏特N沟道功率MOSFET


型号：	2N70L-TF3-T
厂家：	Unisonic Technologies
描述：	2 Amps, 700 Volts N-CHANNEL POWER MOSFET 2安培， 700伏特N沟道功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
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UNISONIC TECHNOLOGIES CO., LTD

2N70

Power MOSFET

2 Amps, 700 Volts N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 2N70 is a high voltage MOSFET designed to have

better characteristics, such as fast switching time, low gate charge,

low on-state resistance and high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching

applications in power supplies, PWM motor controls, high efficient

DC to DC converters and bridge circuits.

FEATURES

* R_DS(ON)= 6.3Ω@V_GS= 10V

* Ultra Low gate charge (typical 8.1nC)

* Low reverse transfer capacitance (C_RSS= typical 5.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

2N70L-TA3-T

2N70L-TF1-T

2N70L-TF3-T

2N70L-TM3-T

2N70L-TN3-R

2N70G-TA3-T

2N70G-TF1-T

2N70G-TF3-T

2N70G-TM3-T

2N70G-TN3-R

TO-220

TO-220F1

TO-220F

TO-251

Tube

TO-252

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

(1) R: Tape Reel, T: Tube

2N70L-TA3-T

(1)Packing Type

(2)Package Type

(3)Lead Plating

(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F,

(2) TM3: TO-251, TN3:TO-252

(3) G: Halogen Free, L: Lead Free

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2N70

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

700

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Avalanche Current (Note 2)

2.0

Continuous

I_D

2.0

Drain Current

Pulsed (Note 2)

Single Pulsed (Note 3)

Repetitive (Note 2)

I_DM

8.0

E_AS

140

V/ns

Avalanche Energy

E_AR

2.8

Peak Diode Recovery dv/dt (Note 4)

TO-220

dv/dt

4.5

Power Dissipation

P_D

TO-220F/TO-220F1

TO-251/TO-252

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°С

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L=45mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤2.0A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

TO-220/TO-220F/TO-220F1

SYMBOL

RATINGS

62.5

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JA

TO-251/TO-252

TO-220

110

2.76

θ_Jc

TO-220F/TO-220F1

TO-251/TO-252

4.46

4.24

ELECTRICAL CHARACTERISTICS (T_J=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

700

V_DS= 700V, V_GS= 0V

V_GS= 30V, V_DS= 0V

μA

Forward

Reverse

100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

V_GS= -30V, V_DS= 0V

Breakdown Voltage Temperature

Coefficient

△BV_DSS/△T_JI_D= 250 μA, Referenced to 25°C

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

5.0 6.3

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS= 10V, I_D=1A

Ω

C_ISS

C_OSS

C_RSS

270 350 pF

V_DS=25V, V_GS=0V, f =1MHz

Output Capacitance

Reverse Transfer Capacitance

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QW-R502-334.C

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2N70

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

t_{D (ON)}

t_R

t_D(OFF)

t_F

V_DD=350V, I_D=2.0A, R_G=25Ω

(Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

8.1

1.7

4.4

V_DS=560V, V_GS=10V, I_D=2.0A

Gate-Source Charge

Gate-Drain Charge

Q_GS

Q_GD

(Note 1, 2)

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

Continuous Drain-Source Current

Pulsed Drain-Source Current

V_SD

I_SD

V_GS= 0 V, I_SD= 2.0 A

1.4

2.0

8.0

I_SM

Reverse Recovery Time

t_RR

V_GS= 0 V, I_SD= 2.0A

di/dt = 100 A/μs (Note1)

260

μC

Reverse Recovery Charge

Q_RR

1.09

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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2N70

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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2N70

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

V_DS

90%

10%

V_GS

t_D(ON)

t_D(OFF)

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

V_GS

Q_G

10V

Q_GS

Q_GD

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

BV^DSS

LI_AS

BVDSS - VDD

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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2N70

Power MOSFET

TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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