2N80G-TN3-T [UTC]
2A, 800V N-CHANNEL POWER MOSFET; 2A ， 800V N沟道功率MOSFET
| 型号： | 2N80G-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2A, 800V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N80
Power MOSFET
2A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N80 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 2N80 is universally applied in high efficiency switch
mode power supply.
FEATURES
* RDS(on) = 6.3Ω @VGS = 10 V
* High switching speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
2
3
S
S
S
S
Lead Free
Halogen Free
2N80G-TF3-T
2N80G-TM3-R
2N80G-TN3-R
2N80G-TN3-T
2N80L-TF3-T
2N80L-TM3-R
2N80L-TN3-R
2N80L-TN3-T
TO-220F
TO-251
TO-252
TO-252
G
G
G
G
D
D
D
D
Tube
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
1 of 6
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-480.C
2N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
800
±30
2.4
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 1)
A
Continuous
ID
2.4
A
Drain Current
Pulsed (Note 1)
IDM
9.6
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
180
8.5
mJ
mJ
V/ns
Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 3)
TO-220F
dv/dt
4.0
24
Power Dissipation
TO-251
TO-252
PD
W
43
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55~+150
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F
TO-251
TO-252
TO-220F
TO-251
TO-252
Junction to Ambient
Junction to Case
θJA
110
5.2
θJC
°C/W
2.85
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS
△BVDSS/△TJ
ID=250µA, VGS=0V
800
V
Reference to 25°C, ID=250µA
DS=800V, VGS=0V
VDS=640V, TC=125°C
GS=+30V, VDS=0V
0.9
V/°C
V
10
Drain-Source Leakage Current
IDSS
IGSS
µA
100
Forward
Gate- Source Leakage Current
Reverse
V
+100 nA
-100 nA
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=1.2A
VDS=50V, ID=1.2A
3.0
5.0
6.3
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
4.8
2.65
CISS
COSS
CRSS
425 550 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
45
60
pF
Reverse Transfer Capacitance
5.5
7.0 pF
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-480.C
www.unisonic.com.tw
2N80
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
QG
QGS
QGD
tD(ON)
tR
12
2.6
6.0
12
30
25
28
15 nC
nC
VGS=10V, VDS=640V,
ID=2.4A (Note 1,2)
nC
35 ns
70 ns
60 ns
65 ns
VDD=400V, ID=2.4A,
RG=25Ω (Note 1,2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.4
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
9.6
1.4
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 1)
Reverse Recovery Charge (Note 1)
VSD
tRR
IS=2.4A, VGS=0V
IS=2.4A, VGS=0V,
dIF/dt=100A/µs
V
480
2.0
ns
µC
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-480.C
www.unisonic.com.tw
2N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
(Driver
10V
)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-480.C
www.unisonic.com.tw
2N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-480.C
www.unisonic.com.tw
2N80
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-480.C
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明