2SA1627AK [UTC]
Small Signal Bipolar Transistor, 1A I(C), PNP;型号: | 2SA1627AK |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 1A I(C), PNP 局域网 开关 晶体管 |
文件: | 总3页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UTC2SA1627A PNPEPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627A is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
1
*High-speed switching
TO-126C
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
*1 : PW≦10ms,Duty Cycle≦50%
SYMBOL
VCBO
VCEO
VEBO
PC
VALUE
-600
-600
-7.0
1.0
-1.0
-2.0
150
UNIT
V
V
V
W
A
A
°C
°C
Ic
Icp *1
Tj
TSTG
-55 to +150
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITIONS
VCB= -600V,IE=0
VEB= -7.0V,Ic=0
MIN TYP MAX UNIT
-10
-10
120
µA
µA
IEBO
hFE1*2
hFE2*2
VCE= -5.0V,Ic= -0.1A
VCE= -5.0V,Ic= -0.5A
30
4
58
19
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
VCE(sat)*2 Ic= -0.3A,IB= -0.06A
VBE(sat)*2 Ic= -0.3A,IB= -0.06A
-0.28 -1.5
-0.85 -1.2
28
V
V
MHz
fT
VCE= -10V, IE=0.1A
10
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R217-004,A
UTC2SA1627A PNPEPITAXIAL SILICON TRANSISTOR
PARAMETER
Output Capacitance
Turn-On Time
Storage Time
Fall Time
*2 : Pulsed PW≦350µs,Duty Cycle≦2%
SYMBOL
TEST CONDITIONS
VCB= -10V, IE=0, f=1.0MHz
Ic =-0.5A,RL=500Ω
IB1= -IB2= -0.1A
MIN TYP MAX UNIT
Cob
ton
tstg
tf
42
0.1
50
0.5
5.0
0.5
pF
µs
µs
µs
3.5
Vcc =-250V
0.08
CLASSIFICATION OF hFE1
RANK
M
L
K
RANGE
30-60
40-80
60-120
TYPICAL CHARACTERISTICS
Collector Current vs.
DC Durrent Gain vs. Collector Current
VCE= -5.0V
Collector to Emitter Voltage
1000
300
-100
IB=1.8mA
IB=1.6mA
IB=1.4mA
-80
-60
100
30
IB=1.2mA
IB=1.0mA
-40
IB=0.8mA
IB=0.6mA
10
3
-20
0
IB=0.4mA
IB=0.2mA
1
-
-0.02
-0.002 -0.005
-0.1 -0.2
-1.0
-0.5
2.0
-0.01
-0.05
-2.0
0
-4.0
-6.0
-8.0
-10
Ic -Collector Current (A)
VCE -Collector to Emitter Voltage (V)
Collector Current vs.
Collector And Base Saturation
Voltage vs.Collector Current
Base to Emitter Voltage
-1.0
-3.0
-1.0
Ic =5IB
VCE= -5.0V
-0.3
-0.1
VBE(sat)
-0.3
-0.1
-0.03
-0.01
VcE(sat)
-0.003
-0.03
-0.8
-1.0 -1.2
-1.6
-0.2 -0.4 -0.6
-1.4
0
-0.005
-0.02
-0.1 -0.2
-0.5
-0.01
-0.05
VBE -Base to Emitter Voltage (V)
Ic -Collector Current (A)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R217-004,A
UTC2SA1627A PNPEPITAXIAL SILICON TRANSISTOR
Gain Bandwidth Product
vs.Collector Current
Turn Off Time vs.Collecotr Current
100
50
Ic /IB =5
VCB= -5.0V
5.0
VCE= -250V
IB1= -IB2
tstg
2.0
1.0
0.5
20
10
5.0
0.2
2.0
tf
0.1
-0.03
1.0
-0.1
-0.2
-0.05 -0.1
Ic -Collector Current (mA)
-0.3
-1.0
-3.0
-0.005-0.01-0.02
-0.002
Ic -Collector Current (A)
Output Capacitance
vs.Collecotor To Base Voltage
Collector Power Dissipation
vs.Ambient Temperature
1.2
1.0
0.8
0.6
200
100
50
IE=0
Free Air
20
10
0.4
0.2
5.0
2.0
0
0
-10
-100
-300
-3.0
-30
25
50
100 125 150
75
Ta -Ambient Temperature (℃)
VCB-Collector to Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R217-004,A
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