2SA1627A_12 [UTC]

PNP EPITAXIAL SILICON TRANSISTOR; PNP外延硅晶体管


型号：	2SA1627A_12
厂家：	Unisonic Technologies
描述：	PNP EPITAXIAL SILICON TRANSISTOR PNP外延硅晶体管晶体晶体管
文件：	总4页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SA1627A

PNP SILICON TRANSISTOR

PNP EPITAXIAL SILICON

TRANSISTOR

TO-252

DESCRIPTION

The UTC 2SA1627A is designed for general purpose

amplifier and high speed switching applications.

TO-126

FEATURES

* High voltage

* Low collector saturation voltage.

* High-speed switching

TO-126C

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free

Halogen Free

2SA1627AL-x-T60-K

2SA1627AL-x-T6C-K

2SA1627AL-x-TN3-R

2SA1627AL-x-TN3-T

2SA1627AG-x-T60-K

2SA1627AG-x-T6C-K

2SA1627AG-x-TN3-R

2SA1627AG-x-TN3-T

TO-126

TO-126C

TO-252

Bulk

Tape Reel

Tube

2SA1627AL-x-T6C- K

(1) K: Bulk, R: Tape Reel, T: Tube

(1)Packing Type

(2)Package Type

(3)Rank

(2) T6C: TO-126C, T60: TO-126, TN3: TO-252

(3) x: reference to Classification of h_FE1

(4) Halogen Free, L: Lead Free

(4)Lead Free

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2SA1627A

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

RATINGS

-600

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

-600

V_EBO

-7.0

TO-126/TO-126C

TO-252

1.0

Collector Power Dissipation

P_C

1.9

Collector Current (DC)

I_C

I_CP

-1.0

Collector Current (Pulse) (Note 2)

Junction Temperature

-2.0

T_J

150

°C

Storage Temperature

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. PW≦10ms, Duty Cycle≦50%

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

I_CBO

TEST CONDITIONS

V_CB= -600V, I_E=0

MIN TYP MAX UNIT

Collector Cut-Off Current

Emitter Cut-Off Current

-10

µA

I_EBO

V_EB= -7.0V, I_C=0

h_FE1

V_CE= -5.0V, I_C= -0.1A

V_CE= -5.0V, I_C= -0.5A

58 120

DC Current Gain (Note 2)

h_FE2

Collector-Emitter Saturation Voltage(Note)

Base-Emitter Saturation Voltage(Note)

Gain Bandwidth Product

Output Capacitance

V_CE(SAT)I_C= -0.3A, I_B= -0.06A

-0.28 -1.5

-0.85 -1.2

V_BE(SAT)

f_T

I_C= -0.3A, I_B= -0.06A

V_CE= -10V, I_E=0.1A

MHz

µs

C_OB

t_ON

V_CB= -10V, I_E=0, f=1.0MHz

Turn-On Time

0.1 0.5

3.5 5.0

0.08 0.5

I_C=-0.5A, R_L=500Ω,

I_B1= -I_B2= -0.1A, V_CC=-250V

Storage Time

T_SYG

t_F

µs

Fall Time

µs

Pulsed PW≦350µs,Duty Cycle≦2%

Note:

CLASSIFICATION OF h_FE1

RANK

RANGE

30-60

40-80

60-120

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2SA1627A

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Collector Current vs.

Collector to Emitter Voltage

DC Current Gain vs. Collector Current

-100

-80

1000

300

I_B=1.8mA

I_B=1.6mA

I_B=1.4mA

I_B=1.2mA

I_B=1.0mA

I_B=0.8mA

I_B=0.6mA

100

V_CE=-5.0V

-60

-40

-20

I_B=0.4mA

I_B=0.2mA

-0.002 -0.005

-0.02

-0.01 -0.05

Collector Current, I_C(A)

-0.1-0.2 -0.5-1.0-2.0

-2.0

-4.0

-6.0

-8.0

-10

Collector to Emitter Voltage, V_CE(V)

Collector and Base Saturation Voltage

vs. Collector Current

Collector Current vs.

Base to Emitter Voltage

-1.0

-3.0

-1.0

I_C=5I_B

V_CE=-5.0V

-0.3

-0.1

V_BE(SAT)

-0.3

-0.1

-0.03

-0.01

V_CE(SAT)

-0.03

-0.003

0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

Base to Emitter Voltage, V_BE(V)

-0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5

Collector Current, I_C(A)

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2SA1627A

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

Gain Bandwidth Product vs.

Collector Current

Turn Off Time vs. Collector Current

100

I_C/I_B=5

V_CE=-250V

5.0

V_CB=-5.0V

I_B1=I_B2

t_STG

2.0

1.0

0.5

5.0

0.2

0.1

2.0

1.0

t_F

-0.03

-0.1

-0.3

-1.0

-3.0

-0.002 -0.005-0.01-0.02 -0.05 -0.1 -0.2

Collector Current, I_C(A)

Collector Current, I_C(mA)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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