2SA1627G-T92-K [UTC]

Small Signal Bipolar Transistor,;


型号：	2SA1627G-T92-K
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor,
文件：	总4页 (文件大小：234K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SA1627

NPN SILICON TRANSISTOR

PNP EPITAXIAL SILICON

TRANSISTOR



DESCRIPTION

TO-126

The UTC 2SA1627 is designed for general purpose amplifier and

high speed switching applications.



FEATURES

*High voltage

*Low collector saturation voltage.

*High-speed switching

TO-92

 ORDERING INFORMATION

Ordering Number

Lead Free

Pin Assignment

Packing

Package

Halogen Free

2SA1627L-T60-K

2SA1627L-T92-B

2SA1627G-T60-K

2SA1627G-T92-B

2SA1627G-T92-K

TO-126

TO-92

Bulk

Tape Box

Bulk

2SA1627L-T92-K

Note: Pin Assignment: E: Emitter

C: Collector

B: Base

2SA1627G-T60-K

(1)Packing Type

(2)Package Type

(3)Green Package

(1) K: Bulk, B: Tape Box

(2) T60: TO-126, T92: TO-92

(3) G: Halogen Free and Lead Free, L: Lead Free



MARKING

TO-126

Date Code

TO-92

UTC

2SA1627

L: Lead Free

G: Halogen Free

Date Code

2SA1627

L: Lead Free

G: Halogen Free

www.unisonic.com.tw

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2SA1627

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-600

UNIT

Collector-Base Voltage

Collector-emitter voltage

Emitter-Base Voltage

Collector Current

-600

-7.0

-1.0

Collector Current (Peak)

I_CP

-2.0 (Note 1)

TO-126

TO-92

Collector Dissipation

P_C

0.6

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. P_W≦10ms, Duty Cycle≦50%.



ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

I_CBO

TEST CONDITIONS

V_CB= -600V, I_E=0

MIN TYP MAX UNIT

Collector Cut-Off Current

Emitter Cut-Off Current

-10

120

µA

I_EBO

V_EB= -7.0V, I_C=0

h_FE1

V_CE= -5.0V, I_C= -0.1A

V_CE= -5.0V, I_C= -0.5A

DC Current Gain (Note)

h_FE2

Collector-Emitter Saturation Voltage

(Note)

V_CE(sat)

V_BE(sat)

I_C= -0.3A, I_B= -0.06A

-0.28 -0.5

Base-Emitter Saturation Voltage

(Note)

-0.85 -1.2

Gain Bandwidth Product

Output Capacitance

f_T

V_CE= -10V, I_E=0.1A

V_CB= -10V, I_E=0, f=1.0MHz

I_C=-0.5A, R_L=500Ω

I_B1= -I_B2= -0.1A

MHz

Cob

Turn-On Time

t_on

0.1

0.5

µs

V_CC=-250V

Storage Time

Fall Time

T_STG

t_f

3.5

5.0

0.5

µs

0.08

Note: Pulse test: Pulse width=300μs, Duty Cycle≦2%



CLASSIFICATION OF h_FE1

RANK

RANGE

30 ~ 60

40 ~ 80

60 ~ 120

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2SA1627

NPN SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

Collector Current vs.

Collector to Emitter Voltage

DC Durrent Gain vs. Collector Current

VCE= -5.0V

1000

300

-100

IB=1.8mA

-80

-60

IB=1.6mA

IB=1.4mA

I^B

100

IB=1.2mA

IB=1.0mA

-40

IB=0.8mA

IB=0.6mA

IB=0.4mA

-20

IB=0.2mA

-4.0 -6.0

-0.02

-0.002 -0.005

-0.1 -0.2

-1.0

-0.5

2.0

-0.01

-0.05

-2.0

-8.0

-10

Ic -Collector Current (A)

VCE -Collector to Emitter Voltage (V)

Collector Current vs.

Base to Emitter Voltage

Collector and Base Saturation

Voltage vs.Collector Current

-1.0

VCE= -5.0V

-1

-0.3

-0.1

VBE(sat)

-0.03

-0.01

-0.1

VcE(sat)

-0.003

-0.01

-0.8

-1.0 -1.2

-1.6

-1.4

-0.2 -0.4 -0.6

-0.001

-0.01

-0.1

VBE -Base to Emitter Voltage (V)

Turn Off Time vs.Collecotr Current

Ic /IB =5

Ic -Collector Current (A)

Gain Bandwidth Product

vs.Collector Current

100

VCB= -5.0V

5.0

VCE= -250V

IB1= -IB2

tstg

2.0

1.0

0.5

0.2

5.0

2.0

0.1

1.0

-0.002

-0.1

Ic -Collector Current (A)

-0.2

-0.03

-0.3

-1.0

-3.0

-0.05 -0.1

Ic -Collector Current (mA)

-0.005-0.01-0.02

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2SA1627

NPN SILICON TRANSISTOR



TYPICAL CHARACTERISTICS (Cont.)

Output Capacitance

vs.Collecotor To Base Voltage

Collector Power Dissipation

vs.Ambient Temperature

1.2

1.0

0.8

0.6

200

100

IE=0

Free Air

0.4

5.0

0.2

2.0

-3.0

-10

-100

-300

-30

100

125 150

Ta -Ambient Temperature (℃)

VCB-Collector to Base Voltage (V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all UTC products described or contained herein.

UTC products are not designed for use in life support appliances, devices or systems where malfunction

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to

make changes to information published in this document, including without limitation specifications and

product descriptions, at any time and without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

UNISONICTECHNOLOGIESCO.,LTD

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