2SA1943L-R-T3N-T [UTC]
Power Bipolar Transistor,;
| 型号： | 2SA1943L-R-T3N-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, |
| 文件： | 总4页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1943
PNP SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
1
1
TO-3P
TO-3PB
FEATURES
* Complementary to UTC 2SC5200
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage
1
TO-3PN
TO-3PL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
2SA1943L-x-T3P-T
2SA1943L-x-T3B-T
2SA1943L-x-T3L-T
2SA1943L-x-T3N-T
2SA1943G-x-T3P-T
2SA1943G-x-T3B-T
2SA1943G-x-T3L-T
2SA1943G-x-T3N-T
C: Collector E: Emitter
TO-3P
TO-3PB
TO-3PL
TO-3PN
Tube
Tube
Tube
Tube
B
B
B
B
C
C
C
C
E
E
E
E
Note: Pin Assignment: B: Base
(1) T: Tube
2SA1943G-x-T3P-T
(1)Packing Type
(2)Package Type
(3)Rank
(2) T3P: TO-3P, T3B: TO-3PB, T3L: TO-3PL
T3L: TO-3PN
(3) Rrefer to CLASSIFICATION OF hFE1
(4) G: Halogen Free and Lead Free, L: Lead Free
(4)Green Package
MARKING
UTC
2 SA1 9 4 3
L: Lead Free
G: Halogen Free
Lot Code
Date Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 4
QW-R214-006.E
2SA1943
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-230
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-230
V
-5
V
Collector Current
-15
A
Base Current
IB
-1.5
A
Collector Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature Range
PC
150
W
°C
°C
TJ
+150
-65 ~ +125
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB = -230V, IE=0
VEB= -5V, IC=0
MIN TYP MAX UNIT
Collector Cut-Off Current
-5.0
-5.0
μA
μA
V
Emitter Cut-Off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR) CEO IC= -50mA, IB=0
-230
55
hFE
hFE
VCE= -5V, IC= -1A
VCE= -5V, IC= -7A
160
DC Current Gain
35
60
-1.5
-1.0
30
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
VCE (SAT) IC= -8A, IB= -0.8A
-3.0
-1.5
V
V
VBE
fT
VCE= -5V, IC= -7A
Transition Frequency
VCE= -5V, IC= -1A
MHz
pF
Collector Output Capacitance
Cob
VCB= -10V, IE=0, f=1MHz
360
CLASSIFICATION OF hFE
Rank
R
O
Range
55 ~ 110
80 ~ 160
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
QW-R214-006.E
www.unisonic.com.tw
2SA1943
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.
Base-Emitter Voltage
Collector Current vs.
Collector-Emitter Voltage
-20
-16
-12
-20
-16
-12
COMMON EMITTER
TC =25℃C
COMMON EMITTER
VCE = -5V
-600
-400
-250
IB = -800mA
-200
-150
-100
-8
-4
0
-8
-4
0
-50
-40
-20
IB = -10mA
25 CC
C
TC =100℃
-30
-25℃C
-0.8 -1.2
0
-2
-4
-6
-8
-10
-1.6
-2.0
0
-0.4
Collector-Emitter Voltage, VCE (V)
Base-Emitter Voltage, VBE (V)
DC Current Gain vs.
Collector Current
Collector-Emitter Saturation
Voltage vs. Collector Current
-3
300
100
T =100℃
C
C
-1
C
25℃
-0.3
-0.1
-25℃C
TC =100℃C
30
10
C
-25℃
25℃
C
COMMON EMITTER
VCE = -5V
COMMON EMITTER
IC / IB = 10
-0.01
1
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
Collector Current, IC (A)
Collector Current, IC (A)
Transient Thermal Resistance
vs. Pulse Width
CURVES SHOULD BE
APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE
PULSE)
Safe Operating Area
-50
-30
10
1
IC MAX. (PULSED)
1ms
IC MAX.
(CONTINUOUS)
10ms
-10
100ms
-5
-3
DC
OPERATION
C
TC =100
-1
INFINTE HEAT SINK
-0.5
-0.3
0.1
**SINGLE NONREPETITIVE
C
PULSE TC = 25
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
-0.1
VCEO MAX.
-0.05
-0.03
0.01
-3
-100 -300 -1000
-10 -30
0.001 0.01 0.1
1
10 100 1000
Collector-Emitter Voltage, VCE (V)
Pulse Width, tw (s)
UNISONICTECHNOLOGIESCO.,LTD
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QW-R214-006.E
www.unisonic.com.tw
2SA1943
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
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