2SA733L-K-AE3-R [UTC]
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR; 低频放大器PNP外延硅晶体管型号: | 2SA733L-K-AE3-R |
厂家: | Unisonic Technologies |
描述: | LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
文件: | 总4页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA733
PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
3
1
2
SOT-23
ꢀ
DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
3
ꢀ
FEATURES
1
2
* Collector-Emitter voltage:
BVCBO=-50V
SOT-323
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
*Pb-free plating product number:2SA733L
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
E
E
2
C
C
3
B
B
2SA733-x-AE3-R
2SA733-x-AL3-R
2SA733L-x-AE3-R
2SA733L-x-AL3-R
SOT-23
Tape Reel
Tape Reel
SOT-323
2SA733L-x-AE3-R
(1)Packing Type
(2)Package Type
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323
(3) x: refer to Classification of h
(3)Rank
FE
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
ꢀ
MARKING
A 7
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-068,B
2SA733
PNP SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PC
RATINGS
-60
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25℃)
-50
V
-5
V
250
mW
mA
℃
Collector Current
IC
-150
Junction Temperature
Storage Temperature
TJ
125
℃
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
A, IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
BVCBO IC=-100
µ
-60
-50
V
V
V
BVCEO IC=-10mA, IB=0
VCE(SAT) IC=-100mA, IB=-10mA
-0.1 -0.3
ICBO
IEBO
hFE
fT
VCB=-40V, IE=0
-100 nA
-100 nA
600
Emitter Cut-Off Current
VEB=-3V, IC=0
DC Current Gain(note)
VCE=-6V, IC=-1mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
IC=-0.1mA, VCE=-6V
90
Current Gain Bandwidth Product
Output Capacitance
100 190
2.0
MHz
Cob
3.0
6.0
pF
Noise Figure
NF
4.0
dB
RG=10k
Ω, f=100Hz
ꢀ
CLASSIFICATION OF hFE
RANK
R
Q
P
K
RANGE
90-180
135-270
200-400
300-600
UNISONIC TECHNOLOGIES CO., LTD
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2SA733
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Fig.1 Static Characteristics
Fig.2 DC Current Gain
VCE=-6V
-100
-80
103
102
IB=-300µA
IB=-250µA
-60
-40
IB=-200µA
IB=-150µA
101
100
-20
0
IB=-100µA
IB=-50µA
-10-1
-100
-101
-102
-103
0
-4
-8
-12
-16
-20
Collector-Emitter Voltage ( V)
CollectorCurrent, IC (mA)
Fig.3 Base-Emitter on Voltage
Fig.4 Saturation Voltage
-102
-101
-104
-103
IC=10*IB
VCE=-6V
VBE(SAT)
VCE(SAT)
-100
-102
-101
-10-1
0
-0.2
-0.4 -0.6
-0.8 -1.0
-10-1
-100
-101
-102
-103
Base-Emitter Voltage (V)
Collector Current, IC (mA)
Fig.5 CurrentGain-Bandwidth Product
Fig.6 CollectorOutput Capacitance
102
101
103
102
VCE=-6V
100
101
100
10-1
-10-1
-100
-101
-102
-100
-101
-102
-103
CollectorCurrent, IC (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-068,B
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2SA733
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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