2SA733L-Q-AE3-R [UTC]

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR; 低频放大器PNP外延硅晶体管
2SA733L-Q-AE3-R
型号: 2SA733L-Q-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
低频放大器PNP外延硅晶体管

晶体 放大器 晶体管
文件: 总4页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SA733  
PNP SILICON TRANSISTOR  
LOW FREQUENCY AMPLIFIER  
PNP EPITAXIAL SILICON  
TRANSISTOR  
3
1
2
SOT-23  
DESCRIPTION  
The UTC 2SA733 is a low frequency amplifier.  
3
FEATURES  
1
2
* Collector-Emitter voltage:  
BVCBO=-50V  
SOT-323  
* Collector current up to -150mA  
* High hFE linearity  
* Complimentary to 2SC945  
*Pb-free plating product number:2SA733L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
E
E
2
C
C
3
B
B
2SA733-x-AE3-R  
2SA733-x-AL3-R  
2SA733L-x-AE3-R  
2SA733L-x-AL3-R  
SOT-23  
Tape Reel  
Tape Reel  
SOT-323  
2SA733L-x-AE3-R  
(1)Packing Type  
(2)Package Type  
(1) R: Tape Reel  
(2) AE3: SOT-23, AL3: SOT-323  
(3) x: refer to Classification of h  
(3)Rank  
FE  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
MARKING  
A 7  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-068,B  
2SA733  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
PC  
RATINGS  
-60  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Dissipation(Ta=25)  
-50  
V
-5  
V
250  
mW  
mA  
Collector Current  
IC  
-150  
Junction Temperature  
Storage Temperature  
TJ  
125  
TSTG  
-55 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
A, IE=0  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector Cut-Off Current  
BVCBO IC=-100  
µ
-60  
-50  
V
V
V
BVCEO IC=-10mA, IB=0  
VCE(SAT) IC=-100mA, IB=-10mA  
-0.1 -0.3  
ICBO  
IEBO  
hFE  
fT  
VCB=-40V, IE=0  
-100 nA  
-100 nA  
600  
Emitter Cut-Off Current  
VEB=-3V, IC=0  
DC Current Gain(note)  
VCE=-6V, IC=-1mA  
VCE=-10V, IC=-50mA  
VCB=-10V, IE=0, f=1MHz  
IC=-0.1mA, VCE=-6V  
90  
Current Gain Bandwidth Product  
Output Capacitance  
100 190  
2.0  
MHz  
Cob  
3.0  
6.0  
pF  
Noise Figure  
NF  
4.0  
dB  
RG=10k  
, f=100Hz  
CLASSIFICATION OF hFE  
RANK  
R
Q
P
K
RANGE  
90-180  
135-270  
200-400  
300-600  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-068,B  
www.unisonic.com.tw  
2SA733  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Fig.1 Static Characteristics  
Fig.2 DC Current Gain  
VCE=-6V  
-100  
-80  
103  
102  
IB=-300µA  
IB=-250µA  
-60  
-40  
IB=-200µA  
IB=-150µA  
101  
100  
-20  
0
IB=-100µA  
IB=-50µA  
-10-1  
-100  
-101  
-102  
-103  
0
-4  
-8  
-12  
-16  
-20  
Collector-Emitter Voltage ( V)  
CollectorCurrent, IC (mA)  
Fig.3 Base-Emitter on Voltage  
Fig.4 Saturation Voltage  
-102  
-101  
-104  
-103  
IC=10*IB  
VCE=-6V  
VBE(SAT)  
VCE(SAT)  
-100  
-102  
-101  
-10-1  
0
-0.2  
-0.4 -0.6  
-0.8 -1.0  
-10-1  
-100  
-101  
-102  
-103  
Base-Emitter Voltage (V)  
Collector Current, IC (mA)  
Fig.5 CurrentGain-Bandwidth Product  
Fig.6 CollectorOutput Capacitance  
102  
101  
103  
102  
VCE=-6V  
100  
101  
100  
10-1  
-10-1  
-100  
-101  
-102  
-100  
-101  
-102  
-103  
CollectorCurrent, IC (mA)  
Collector-Base Voltage (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-068,B  
www.unisonic.com.tw  
2SA733  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-068,B  
www.unisonic.com.tw  

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