2SB1260PL-AB3-R [UTC]
Transistor;
| 型号： | 2SB1260PL-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
ꢀ
DESCRIPTION
The UTC 2SB1260 is a epitaxial planar type PNP silicon
transistor.
1
ꢀ FEATURES
*High breakdown voltage and high current.
BVCEO= -80V, Ic = -1A
*Good hFE linearity.
*Low VCE(sat)
SOT-89
*Pb-free plating product number: 2SB1260L
ꢀ PIN CONFIGURATION
PIN NO.
PIN NAME
Emitter
1
2
3
Collector
Base
ꢀ ORDERING INFORMATION
Order Number
Package
SOT-89
Packing
Tape Reel
Normal
Lead free
2SB1260-AB3-R 2SB1260L-AB3-R
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R208-017.B
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector -Base Voltage
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
UNIT
V
-80
Collector -Emitter Voltage
-80
V
Emitter -Base Voltage
-5
-2
V
Peak Collector Current (single pulse, Pw=100ms)
DC Collector Current
A
IC
-1
A
0.5
W
W
℃
℃
Power Dissipation
PD
2.0(Note 1)
+150
Operating Temperature
TJ
Storage Temperature
TSTG
-40 ~ +150
Note 1: When mounted on a 40*40*0.7 mm ceramic board.
2: Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger.
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
BVCBO
TEST CONDITIONS
IC= -50μA
MIN
-80
-80
-5
TYP
MAX
UNIT
V
BVCEO IC= -1mA
V
IE= -50μA
BVEBO
ICBO
IEBO
V
μA
μA
VCB=-60V
-1
-1
Emitter Cut-Off Current
VEB=-4V
DC Current Gain(Note 1)
hFE
VCE=-3V, IO=-0.1A
82
390
-0.4
Collector-Emitter Saturation Voltage
Transition Frequency
VCE(sat) Ic=-500mA, IB=-50mA
V
fT
VCE= -5V, IE=50mA, f=30MHz
VCB=-10V,IE=0,f=1MHz
100
25
MHz
pF
Output Capacitance
Cob
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82 ~ 180
120 ~ 270
180 ~ 390
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R208-017.B
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
■
TYPICAL CHARACTERICS
Figure 1.Grounded Emitter
Propagation Characteristics
Figure 2.Grounded Emitter
Output Characteristics
-1000
VCE = -5V
Ta=25℃
-1.0
-0.45mA
Ta=25℃
-0.4mA
-100
-10
-1
-0.8
-0.35mA
-0.3mA
-0.6
-0.25mA
-0.2mA
-0.4
-0.15mA
-0.1mA
-0.05mA
-0.2
IB =0mA
-0.2-0.4-0.6 -0.8-1.0-1.2 -1.4 -1.6-1.8-2.0
Collector to Emitter Voltage, VCE(V)
-0.1
0
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, VBE(V)
Figure 3.DC Current Gain
vs.Collector Current
Figure 4.Collector-emitter Saturation
Voltage vs.Collector Current
1000
500
Ta=25℃
Ta=25℃
-2
-1
200
100
-0.5
VcE= -3V
VcE= -1V
-0.2
-0.1
Ic/IB=20
10
50
-0.05
20
10
-0.02
-0.01
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
Figure 5. Gain Bandwidth Product
vs.Emitter Current
Figure 6.CollectorOutput Capacitance
vs.Collector-Base Voltage
1000
1000
Ta=25℃
f=1MHz
IE=0A
Ta=25℃
VCE = -5V
500
500
200
100
200
100
50
50
20
10
20
10
5
5
2
1
2
1
-0.1 -0.2 -0.5-1 -2
-5 -10 -20 -50 -100
1
2
5 10 20 50 100200 5001000
Emitter Current, IE (mA)
Collector To Base Voltage, VCB(V)
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R208-017.B
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERICS(cont.)
Figure 7.Emitter Input Capacitance
vs.Emitter-Base Voltage
Figure 8.Safe Operating Area
1000
500
-2
Ta=25℃
f=1MHz
P
-1
W
=
Ic=0A
1
0
m
P
s
-0.5
W
=
200
100
50
1
0
0
m
s
-0.2
-0.1
D
C
-0.05
20
Ta=25℃
*Single pulse
-0.1
-0.2
-0.5 -1
-2
-5 -10
-0.5
-1 -2
-5 -10 -20 -50 -100
Emitter To Base Voltage, VEB(V)
Collector to Emitter Voltage, VCE(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R208-017.B
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