2SB1412L-TN3-C-R [UTC]
HIGH VOLTAGE SWITCHING TRANSISTOR; 高电压开关晶体管
| 型号： | 2SB1412L-TN3-C-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 文件： | 总5页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
ꢀ
DESCRIPTION
The UTC 2SB1412 is an epitaxial planar type PNP silicon
transistor.
1
TO-252
ꢀ
FEATURES
*Excellent DC current gain characteristics
*Low VCE(SAT)
VCE(SAT)= -0.35V (Typ)
(IC/IB = -4A/-0.1A)
*Pb-free plating product number:2SB1412L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
TO-252
Packing
Normal
Lead Free Plating
1
2
3
2SB1412-TN3-F-R
2SB1412L-TN3-F-R
B
C
E
Tape Reel
2SB1412L-TN3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) TN3: TO-252
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R209-021,A
2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
LIMITS
-30
-20
-6
-5
-10
1
UNIT
V
V
V
A
A
W
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(PULSE) Single pulse, Pw=10ms
Collector Power Dissipation
Collector Power Dissipation (note2)
Junction Temperature
ICP
PD
PD
TJ
10(TC=25°C)
+150
-40 ~ +150
°C
°C
Storage Temperature
TSTG
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.When mounted on a 40*40*0.7mm ceramic board.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage BVCEO IC= -1mA
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCBO
TEST CONDITIONS
IC= -50μA
MIN TYP MAX UNIT
-30
-20
-6
V
V
V
IE= -50μA
BVEBO
ICBO
IEBO
μA
μA
VCB= -20V
-0.5
-0.5
390
-1.0
VEB= -5V
VCE= -2V,Ic= -0.5A
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage VCE(SAT) IC/IB= -4A/-0.1A
hFE
82
V
Transition Frequency
Output Capacitance
fT
Cob
VCE= -6V, IE= 50 mA, f=30MHz
VCB= -20V, IE= 0 A, f=1MHz
120
60
MHz
pF
ꢀ
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
UNISONIC TECHNOLOGIES CO., LTD
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2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
Grounded Emitter Output
Characteristics
-5
-10
-5
-50mA
-45mA
-30mA
-25mA
Ta=25℃
VCE = -2V
-2
-20mA
Ta=100℃
-4
-3
-2
-1
-1
-500m
-15mA
Ta=25℃
-200m
-10mA
-35mA
-100m
-50m
Ta= -25℃
-40mA
-0.8
-5mA
-20m
-10m
-5m
-2m
-1m
IB =0mA
-1.6 -2.0
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage:VBE(V)
0
-0.4
-1.2
Collector to Emitter Voltage:VCE(V)
DC Current Gain vs.Collector Current (I)
DC Current Gain vs.Collector
Current(II)
5k
5k
VcE= -1V
Ta=25℃
2k
1k
2k
1k
Ta=100℃
500
500
VcE= -5V
200
100
200
100
VcE= -2V
VcE= -1V
Ta=25℃
Ta= -25℃
50
50
20
10
20
10
5
5
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-1
-1m-2m
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-1m-2m
-1
Collector Current : Ic(A)
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (I)
DC Current Gain vs.Collector Current (III)
VcE= -2V
5k
-5
Ta=25℃
2k
1k
-2
-1
Ta=100℃
500
-0.5
Ic/IB=50/1
40/1
200
100
-0.2
-0.1
Ta= -25℃
30/1
10/1
Ta=25℃
50
-0.05
20
10
-0.02
-0.01
5
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-2m
-1
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-1
-1m-2m
Collector Current : Ic(A)
Collector Current : Ic(A)
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2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Collector-emitter Saturation Voltage
vs.Collector Current (II)
Collector-emitter Saturation Voltage
vs.Collector Current (III)
-5
-5
Ic/IB=10
Ic/IB=30
-2
-1
-2
-1
Ta=100℃
-0.5
-0.5
Ta=25℃
-0.2
-0.1
-0.2
-0.1
Ta=100℃
-0.05
-0.05
Ta=25℃
Ta= -25℃
-0.02
-0.01
-0.02
-0.01
Ta= -25℃
-0.05 -0.1-0.2
-0.01-0.02
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5 -2 -5 -10
-1
-5m
-0.5
-2 -5 -10
-2m
-2m
-1
Collector Current : Ic(A)
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (IV)
Collector-emitter Saturation Voltage
vs.Collector Current (V)
-5
-5
Ic/IB=40
Ic/IB=50
Ta= -25℃
Ta=25℃
Ta= -25℃
-2
-1
-2
-1
Ta=25℃
Ta=100℃
-0.5
-0.5
-0.2
-0.1
-0.2
-0.1
Ta=100℃
-0.05
-0.05
-0.02
-0.01
-0.02
-0.01
-0.05 -0.1-0.2
-0.01-0.02
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5 -2 -5 -10
-1
-5m
-0.5
-2 -5 -10
-2m
-2m
-1
Collector Current : Ic(A)
Collector Current : Ic(A)
Gain Bandwidth Product vs.Emitter
Current
Collector Output Capacitance
vs.Collector-Base Voltage
1000
500
1000
500
Ta=25℃
f =1MHz
IE=0A
Ta=25℃
VcE= -6V
200
100
200
50
100
50
20
10
5
20
10
2
1
1
-0.1 -0.2
-1 -2
-0.5
-5 -10 -20 -50
5
2
10 20
50 100200 500 1000
Emitter Current : IE(mA)
Collector to Base Voltage:VCB (V)
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2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Emitter Input Capacitance vs.Emitter-
Base Voltage
1000
500
Ta=25℃
f=1MHz
Ic=0A
200
100
50
20
-0.2
-0.5 -1
-2
-5 -10
-0.1
Emitter To Base Voltage : VEB(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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