2SB772ANLQ [UTC]
Transistor;
| 型号： | 2SB772ANLQ |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SB772ANL PNPEPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772ANL is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
1
*Complement to 2SD882ANL
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
V
W
A
-40
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (Ta=25°C)
Collector Current (DC)
Collector Current (PULSE)
Base Current
-30
-5
1
-3
-7
Ic
Ic
A
A
IB
-0.6
Junction Temperature
Storage Temperature
Tj
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note 1)
SYMBOL
TEST CONDITIONS
VCB=-30V,IE=0
MIN TYP MAX UNIT
ICBO
IEBO
hFE1
hFE2
-1000
-1000
nA
nA
VEB=-3V,Ic=0
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
30
100
200
150
-0.3
-1.0
80
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
fT
Ic=-2A,IB=-0.2A
Ic=-2A,IB=-0.2A
VCE=-5V,Ic=-0.1A
VCB=-10V,IE=0,f=1MHz
V
V
MHz
pF
Cob
45
Note 1:Pulse test: PW<300µs, Duty Cycle<2%
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R211-017,A
UTC2SB772ANL PNPEPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.2 Derating curve of safe
Fig.1 Static characteristics
Fig.3 Power Derating
operating areas
150
12
8
1.6
-IB=9mA
-IB=8MA
-IB=7mA
100
1.2
-IB=6mA
-IB=5mA
0.8
-IB=4mA
50
4
0
-IB=3mA
0.4
-IB=2mA
-IB=1mA
0
0
0
4
8
12
16
20
-50
0
50
100
150
200
-50
0
50
100
150
200
-Collector-Emitter voltage(V)
Tc,Case Temperature(° C)
Tc,Case Temperature(° C)
Fig.4 Collector Output
capacitance
Fig.5 Current gain-
bandwidth product
Fig.6 Safe operating area
3
3
1
Ic(max),Pulse
Ic(max),DC
10
10
10
VCE=5V
IB=8mA
IE=0
f=1MHz
2
2
0
10
10
10
1
1
10
-1
10
10
0
0
-2
10
10
10
0
-1
10
-2
10
-3
10
-2
10
-1
10
0
1
0
1
2
10
10
10
10
10
10
Collector-Emitter Voltage
Ic,Collector current(A)
-Collector-Base Voltage(v)
Fig.7 DC current gain
Fig.8 Saturation Voltage
3
4
10
10
VCE=-2V
VBE(sat)
3
10
2
10
2
10
VCE(sat)
1
10
1
10
0
0
10
10
0
10
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R211-017,A
UTC2SB772ANL PNPEPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R211-017,A
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UTC
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