2SB772L-P-T9N-K [UTC]

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE, TO-92NL, 3 PIN;
2SB772L-P-T9N-K
型号: 2SB772L-P-T9N-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE, TO-92NL, 3 PIN

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文件: 总4页 (文件大小:170K)
中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2SB772  
PNP SILICON TRANSISTOR  
MEDIUM POWER LOW  
VOLTAGE TRANSISTOR  
„
DESCRIPTION  
The UTC 2SB772 is a medium power low voltage transistor,  
designed for audio power amplifier, DC-DC converter and voltage  
regulator.  
„ FEATURES  
* High current output up to 3A  
* Low saturation voltage  
* Complement to 2SD882  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
E
E
B
B
B
E
E
E
2
3
B
B
E
E
E
B
B
B
2SB772L-x-T60-K  
2SB772L-x-T6C-K  
2SB772L-x-TM3-T  
2SB772L-x-TN3-R  
2SB772L-x-TN3-T  
2SB772L-x-T9N-B  
2SB772L-x-T9N-K  
2SB772L-x-T9N-R  
2SB772G-x-T60-K  
2SB772G-x-T6C-K  
2SB772G-x-TM3-T  
2SB772G-x-TN3-R  
2SB772G-x-TN3-T  
2SB772G-x-T9N-B  
2SB772G-x-T9N-K  
2SB772G-x-T9N-R  
TO-126  
TO-126C  
TO-251  
C
C
C
C
C
C
C
C
Bulk  
Bulk  
Tube  
TO-252  
Tape Reel  
Tube  
TO-252  
TO-92NL  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
Tape Reel  
www.unisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R213-016,F  
2SB772  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA = 25)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
-30  
-5  
V
V
DC  
-3  
A
Collector Current  
Base Current  
Pulse  
ICP  
-7  
A
IB  
-0.6  
0.5  
1
A
TO-92NL  
Collector Dissipation  
TO-126/TO-126C  
TO-251/TO-252  
PC  
W
1
Junction Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-55 ~ +150  
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATING  
12.5  
UNIT  
°C/W  
TO-126/ TO-126C  
TO-251/ TO-252  
TO-92NL  
Junction to Case  
θJC  
12.5  
25  
„
ELECTRICAL CHARACTERISTICS (TA= 25, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
-40  
-30  
-5  
TYP  
MAX  
UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
BVCBO IC=-100μA, IE=0  
BVCEO IC=-1mA, IB=0  
BVEBO IE=-100μA, IC=0  
V
V
V
ICBO  
ICEO  
IEBO  
hFE1  
hFE2  
VCB=-30V ,IE=0  
VCE=-30V ,IB=0  
VEB=-3V, IC=0  
-1000  
-1000  
-1000  
nA  
nA  
nA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
VCE=-2V, IC=-20mA  
VCE=-2V, IC=-1A  
30  
200  
150  
-0.3  
-1.0  
80  
DC Current Gain (Note 1)  
100  
400  
-0.5  
-2.0  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC=-2A, IB=-0.2A  
VBE(SAT) IC=-2A, IB=-0.2A  
V
V
fT  
VCE=-5V, IC=-0.1A  
MHz  
pF  
COB  
VCB=-10V, IE=0,f=1MHz  
45  
Note 1: Pulse test: PW<300μs, Duty Cycle<2%  
„
CLASSIFICATION OF hFE2  
RANK  
Q
P
E
RANGE  
100 ~ 200  
160 ~ 320  
200 ~ 400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R213-016,F  
www.unisonic.com.tw  
2SB772  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERICS  
Derating Curve of Safe Operating Areas  
Static Characteristics  
150  
100  
1.6  
-IB=9mA  
-IB=8mA  
-IB=7mA  
1.2  
0.8  
-IB=6mA  
-IB=5mA  
-IB=4mA  
50  
-IB=3mA  
-IB=2mA  
0.4  
0
-IB=1mA  
16 20  
0
0
4
8
12  
-50  
0
50  
100  
150  
200  
-Collector-Emitter voltage (V)  
Power Derating  
Case Temperature, Tc ()  
Collector Output Capacitance  
3
2
1
10  
10  
10  
12  
IE=0  
f=1MHz  
8
4
0
0
10  
0
-1  
-2  
-3  
-50  
0
50  
100  
150  
200  
10  
10  
10  
10  
Case Temperature, Tc ()  
-Collector-Base Voltage(v)  
Safe Operating Area  
Current Gain-  
Bandwidth Product  
3
2
1
1
Ic(max),Pulse  
Ic(max),DC  
10  
10  
10  
10  
VCE=5V  
IB=8mA  
0
10  
10  
-1  
0
-2  
10  
10  
-2  
-1  
0
1
0
1
2
10  
10  
10  
10  
10  
10  
10  
Collector-Emitter Voltage  
Collector Current, Ic (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R213-016,F  
www.unisonic.com.tw  
2SB772  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERICS(Cont.)  
DC Current Gain  
Saturation Voltage  
3
4
10  
10  
VCE=-2V  
VBE(SAT)  
3
10  
2
10  
2
10  
VCE(SAT)  
1
10  
1
10  
0
0
10  
10  
0
1
2
3
4
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
-Collector Current, Ic (mA)  
-Collector Current, Ic (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R213-016,F  
www.unisonic.com.tw  

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