2SB824L-X-AB3-R [UTC]

PNP PLANAR SILICON TRANSISTOR; PNP平面硅晶体管


型号：	2SB824L-X-AB3-R
厂家：	Unisonic Technologies
描述：	PNP PLANAR SILICON TRANSISTOR PNP平面硅晶体管晶体晶体管局域网
文件：	总5页 (文件大小：251K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SB824

PNP SILICON TRANSISTOR

PNP PLANAR SILICON

TRANSISTOR

SOT-89

FEATURES

* Low collector-to-emitter saturation voltage:

V_CE(SAT)=-0.4V max/I_C=-3A, I_B=-0.3A

TO-251

TO-126

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free

Halogen Free

2SB824L-x-AB3-R

2SB824L-x-T60-K

2SB824L-x-TM3-T

2SB824G-x-AB3-R

2SB824G-x-T60-K

2SB824G-x-TM3-T

SOT-89

TO-126

TO-251

Tape Reel

Bulk

Tube

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2SB824

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_A=25℃)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

-60

-50

-6

-5

Collector Current (Pulse)

I_CP

-9

0.5

SOT-89

TO-126/ TO-251

Collector Dissipation

P_C

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

℃

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_A=25℃)

PARAMETER SYMBOL TEST CONDITIONS

MIN

-60

-50

-6

TYP MAX UNIT

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector Cut-Off Current

BV_CBOI_C=-1mA, I_E=0

BV_CEOI_C=-1mA, R_BE=∞

BV_EBOI_C=0, I_E=-1mA

I_CBO

I_EBO

h_FE1

h_FE2

f_T

V_CB=-40V, I_E=0

V_EB=-4V, I_C=0

V_CE=-2V, I_C=-1A

-0.1

360

Emitter Cut-Off Current

DC Current Gain

V_CE=-2V, I_C=-3A

V_CE=-5V, I_C=-1A

V_CB=-10V, f=1MHz

Gain Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Turn-ON Time

MHZ

C_OB

100

V_CE(SAT)I_C=-3A, I_B=-0.3A

-0.4

t_ON

t_STG

t_F

See specified test circuit

0.1

1.4

0.2

μs

Storage Time

See specified test circuit

μs

Fall Time

μs

CLASSIFICATION of h_FE1

RANK

RANGE

70-140

100-200

180-360

UNISONIC TECHNOLOGIES CO., LTD

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2SB824

PNP SILICON TRANSISTOR

SWITCHING TIME TEST CIRCUIT

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PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Collector-Emitter Saturation Voltage vs.

Collector Current

Base-Emitter Saturation Voltage vs.

Collector Current

I_C/I_B=20

1.0

I_C/I_B=10

I_C/I_B=20

1.0

-20

0.1

0.01

0.1

1.0

0.1

1.0

Collector Current, -I_C(A)

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2SB824

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

Transition Frequency vs. Collector Current

ASO

10000

3000

1000

V_CE=-5V

f=1MHz

T_C=25℃

I_CP

I_C

300

100

1.0

(Single pulse with

regard to 1 ~ 100ms)

0.1

⁷1.0

⁷100

0.01 0.03

0.1

0.3

Collector Current, -I_C(A)

Collector-to-Emitter Voltage, -V_CE(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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