2SC2655L-X-AE3-R [UTC]
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS; 功率放大器应用电源开关应用型号: | 2SC2655L-X-AE3-R |
厂家: | Unisonic Technologies |
描述: | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS |
文件: | 总4页 (文件大小:254K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC2655
NPN SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage:
VCE(SAT)= 0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Packing
Package
Halogen Free
1
E
E
E
E
2
B
C
C
C
3
C
B
B
B
2SC2655L-x-AE3-R
2SC2655L-x-T9N-B
2SC2655L-x-T9N-K
2SC2655L-x-T9N-R
2SC2655Gx-AE3-R
2SC2655Gx-T9N-B
2SC2655Gx-T9N-K
2SC2655Gx-T9N-R
SOT-23
TO-92NL
TO-92NL
TO-92NL
Tape Reel
Tape Box
Bulk
Tape Reel
MARKING (FOR SOT-23 PACKAGE)
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Copyright © 2011Unisonic Technologies Co., Ltd
QW-R211-013.F
2SC2655
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
50
V
5
V
2
3
A
Collector Current (Pulse) (Note 1)
Base Current
ICP
A
IB
0.5
A
SOT-23
TO-92NL
350
Collector Power Dissipation
Pc
mW
900
Junction Temperature
Storage Temperature
TJ
150
°C
°C
TSTG
-55 ~ +150
Note: 1. PW≦16ms, Duty Cycle≦50%.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
IC= 10mA, IB= 0
MIN
50
TYP
MAX UNIT
V
Collector Emitter Breakdown Voltage
Collector Cut-off Current
VCB=50V, IE= 0
VEB= 5V, IC=0
1.0
1.0
μA
μA
Emitter Cut-off Current
IEBO
hFE(1)
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
70
40
240
DC Current Gain
hFE(2)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
VCE(SAT) IC=1A, IB=0.05A
0.5
1.2
V
V
VBE(SAT)
fT
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
100
30
MHz
pF
Collector Output Capacitance
COB
VCB= 10V, IE= 0, f=1MHz
Switching Time(Turn-on Time)
tON
0.1
μS
IB1= -IB2=0.05A
DUTY CYCLE≦1%
CLASSIFICATION OF hFE(1)
RANK
O
Y
RANGE
70-140
120-240
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2SC2655
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
VCE-Ic
Ic-VCE
1
2.4
2.0
Common Emitter
TA=25°С
25
20
0.8
18
15
12
IB=5mA
Common
Emitter
TA=25°С
1.6
1.2
0.8
0.6
0.4
10
20
10
8
6
30
40
4
0.2
0
IB=2mA
0.4
0
0
0.4 0.8 1.2
1.6
2.4
2.0
0
2
4
6
14
8
10
12
Collector Current, Ic (A)
Collector -Emitter Voltage, VcE(V)
VCE-Ic
VCE-Ic
1
1
IB=5mA
Common EmitterTA= -55°С
0.8
0.8
0.6
0.4
0.6
0.4
IB=5mA
20
10
20
30
10
30
40
40
50
0.2
0
0.2
0
Common Emitter
TA=100°С
0
0.4 0.8 1.2
0
0.4 0.8 1.2
1.6
2.4
1.6
2.4
2.0
2.0
Collector Current, Ic (A)
Collector Current, Ic (A)
hFE -Ic
VCE(SAT) -Ic
1000
1
Common Emitter
Ic/IB=20
Common Emitter
VCE=2V
500
300
0.5
0.3
TA=25°С
TA=100°С
100
0.1
0.05
0.02
TA=100°С
TA=-55°С
50
30
TA=25°С
TA=-55°С
0.3
0.5
10
0.01
0.3
Collector Current, Ic (A)
1
0.03
0.1
1
0.01
0.03 0.05 0.1
Collector Current, Ic (A)
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2SC2655
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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