2SC2655L-Y-AB3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | 2SC2655L-Y-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总4页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC2655
NPN SILICON TRANSISTOR
POWER AMPLIFIER
3
APPLICATIONS POWER
SWITCHING APPLICATIONS
2
1
1
SOT-23
SOT-89
(JEDEC TO-236)
FEATURES
* Low saturation voltage: VCE(SAT)= 0.5V (Max.)
1
* High speed switching time: TSTG=1.0μs (Typ.)
TO-252
1
TO-92NL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Packing
Package
Halogen Free
1
B
B
B
E
E
2
C
E
C
C
C
3
E
C
E
B
B
2SC2655L-x-AB3-R
2SC2655L-x-AE3-R
2SC2655L-x-TN3-R
2SC2655L-x-T9N-B
2SC2655L-x-T9N-K
2SC2655G-x-AB3-R
2SC2655G-x-AE3-R
2SC2655G-x-TN3-R
2SC2655G-x-T9N-B
2SC2655G-x-T9N-K
SOT-89
SOT-23
TO-252
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
TO-92NL
TO-92NL
Note: Pin Assignment: B: Base C: Collector E: Emitter
(1) B: Tape Box, K: Bulk, R: Tape Reel
2C2655G-x-AB3-R
(1)Packing Type
(2) AB3: SOT-89, AE3: SOT-23, T9N: TO-92NL
TN3: TO-252
(2)Package Type
(3)Rank
(3) refer to Classification of hFE1
(4)Green Package
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-23
SOT-89
Date Code
L: Lead Free
G: Halogen Free
L5
L: Lead Free
G: Halogen Free
2SC2655
1
TO-252
TO-92NL
UTC
UTC
2SC2655
L: Lead Free
G: Halogen Free
Date Code
L: Lead Free
2SC2655
G: Halogen Free
Lot Code
Date Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 4
QW-R211-013.J
2SC2655
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
50
V
5
2
V
A
Collector Current (Pulse) (Note 2)
Base Current
ICP
3
A
IB
0.5
A
SOT-23
SOT-89
TO-252
TO-92NL
350
mW
mW
mW
mW
C
°C
C
500
Collector Power Dissipation
PC
1000
900
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-40 ~ +150
-55 ~ +150
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≦16ms, Duty Cycle≦50%.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
50
TYP
MAX UNIT
V
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Voltage
BVCBO IC= 10μA, IE= 0
BVCEO IC= 10mA, IB= 0
BVEBO IE= 10μA, IC= 0
50
5
V
Emitter to Base Breakdown Voltage
V
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
hFE1
hFE2
VCB=50V, IE= 0
VEB= 5V, IC=0
1.0
1.0
μA
μA
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
70
40
240
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
VCE(SAT) IC=1A, IB=0.05A
VBE(SAT) IC=1A, IB=0.05A
0.5
1.2
V
V
fT
VCE=2V, IC=0.5A
100
30
MHz
pF
Collector Output Capacitance
COB
VCB= 10V, IE= 0, f=1MHz
IB1
OUTPUT
20μs
INPUT
IB2
IB2
IB1
Switching Time(Turn-on Time)
tON
0.1
μS
Vcc=30 V
IB1= -IB2=0.05A
DUTY CYCLE≦1%
CLASSIFICATION OF hFE1
RANK
O
Y
RANGE
70-140
120-240
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
QW-R211-013.J
www.unisonic.com.tw
2SC2655
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
VCE-Ic
Ic-VCE
1
2.4
2.0
Common Emitter
TA=25°С
25
20
0.8
18
15
12
IB=5mA
Common
Emitter
TA=25°С
1.6
1.2
0.8
0.6
0.4
10
20
10
8
6
30
40
4
0.2
0
IB=2mA
0.4
0
0
0.4 0.8 1.2
1.6
2.4
2.0
0
2
4
6
14
8
10
12
Collector Current, Ic (A)
Collector -Emitter Voltage, VcE(V)
VCE-Ic
VCE-Ic
1
1
IB=5mA
Common EmitterTA= -55°С
0.8
0.8
0.6
0.4
0.6
0.4
IB=5mA
20
10
20
30
10
30
40
40
50
0.2
0
0.2
0
Common Emitter
TA=100°С
0
0.4 0.8 1.2
0
0.4 0.8 1.2
1.6
2.4
1.6
2.4
2.0
2.0
Collector Current, Ic (A)
Collector Current, Ic (A)
hFE -Ic
VCE(SAT) -Ic
1000
1
Common Emitter
Ic/IB=20
Common Emitter
VCE=2V
500
300
0.5
0.3
TA=25°С
TA=100°С
100
0.1
0.05
0.02
TA=100°С
TA=-55°С
50
30
TA=25°С
TA=-55°С
0.3
0.5
10
0.01
0.3
Collector Current, Ic (A)
1
0.03
0.1
1
0.01
0.03 0.05 0.1
Collector Current, Ic (A)
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
QW-R211-013.J
www.unisonic.com.tw
2SC2655
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
VBE(SAT) -Ic
Ic-VBE
5
3
2.0
Common Emitter
VCE=2 V
Common Emitter
Ic/IB=20
1.5
1.0
TA=-55°С
TA=100°С
TA=25°С
1
TA=-55°С
0.5
0.3
TA=25°С
TA=100°С
0.5
0
0.1
0.01
0.3
1
0.03 0.05 0.1
0
0.4
0.8
1.2
1.6
2.0
Collector Current, Ic (A)
Base -Emitter Voltage, VBE(V)
Pc-Ta
Safe Operating Area
5
3
1000
800
Ic MAX.(PULSED)*
1ms*
10ms*
M
A
1
X
.
100ms*
(
C
I
c
O
N
600
I
N
U
0.5
0.3
O
U
S
)
1s*
DC Operation
400
200
0
TA=25°С
0.1
Single Nonrepetitive Pulse
TA=25°С
0.05
0.03
Curves Must Be Derated Linearly With
Increase In Temperature
0
40
80
120 160
200 240
VCEO MAX.
0.01
Ambient Temperature,TA (°С)
0.2
0.5
1
3
10 30
100
Collector-Emitter Voltage, VCE(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
QW-R211-013.J
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明