2SC2688-K-T60-B-K [UTC]

NPN SILICON TRANSISTOR; NPN硅晶体管


型号：	2SC2688-K-T60-B-K
厂家：	Unisonic Technologies
描述：	NPN SILICON TRANSISTOR NPN硅晶体管晶体晶体管
文件：	总5页 (文件大小：193K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC2688

NPN EPITAXIAL SILICON TRANSISTOR

NPN SILICON TRANSISTOR

ꢀ

DESCRIPTION

The UTC 2SC2688 is designed for use in Color TV chroma

output circuits.

ꢀ

FEATURES

* High Electrostatic-Discharge-Resistance.

ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)

* Low C_re, High f_T

C_re≤3.0 pF (V_CB=30V)

f_T≥50MHz (V_CE=30V, I_E=-10mA)

TO-126

*Pb-free plating product number: 2SC2688L

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

TO-126

Normal

Lead Free Plating

2SC2688-x-T60-A-K

2SC2688L-x-T60-A-K

Bulk

2SC2688L-x-T60-A-K

(1)Packing Type

(2)Pin Assignment

(3)Package Type

(4)Rank

(1) K: Bulk

(2) refer to Pin Assignment

(3) T60: TO-126

(4) x: refer to Classification of h

(5)Lead Plating

(5) L: Lead Free Plating, Blank: Pb/Sn

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2SC2688

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

300

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

300

5.0

200

Ta=25℃

T_C=25℃

1.25

Total Power Dissipation

P_D

Junction Temperature

Storage Temperature

T_J

150

℃

T_STG

-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER SYMBOL TEST CONDITIONS

V_CE(SAT)I_C=20mA, I_B=5.0mA

MIN

TYP

MAX

1.5

UNIT

Collector Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

I_CBO

I_EBO

h_FE

f_T

V_CB=200V, I_E=0

100

250

V_EB=5.0V, I_C=0

V_CE=10V, I_C=10mA

V_CE=30V, I_E=-10mA

V_CB=30V, I_E=0, f=1.0MHz

Gain Bandwidth Product

Feedback Capacitance

MHz

C_re

Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2%

ꢀ

CLASSIFICATION OF h_FE

Rank

Range

40 ~ 80

60 ~ 120

100 ~ 200

16 ~ 250

UNISONIC TECHNOLOGIES CO., LTD

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2SC2688

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR

Open Collector

TEST CONDITION

1. E-B reverse bias

2.C=2300pF

3. Apply on shot pulse to T.U.T.

(Transistor Under the Test) by SW.

SW.

T.U.T

C=2 300pF

JUDGEMENT

V_D

Reject; BV_EBOwaveform defect

As a result if T.U.T. is not rejected,

apply higher voltage to capacitor and

test again.

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2SC2688

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS (Ta=25℃)

Total Power Dissipation Vs.

Ambinet Temperature

Total Power Dissipation Vs.

Ambinet Temperature

1.5

Free Air

Infinite Heat Sink

1.25

1.0

0.75

0.5

0.25

25 50 75 100 125 150

25 50 75 100 125 150175

Ambient Temperature, Ta (℃)

Collector Currentvs.

Collector to Emitter Voltage

Collector Currentvs.

Collector to Emitter Voltage

3.0

30µA

150µA

2.5

2.0

20µA

100µA

1.5

1.0

I_B=10µA

I_B=50µA

0.5

10 12 14

100

150

Collector TO Emitter Voltage, V_CE(V)

Collector Currentvs. Base to

Emitter Voltage

DC Current Gain vs. Collector

Current

V_CE=10V

200

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

Base to Emitter Voltage, V_BE(V)

0.1 0.51

5 10 50 100 5001000

Collector Current, I_C(mA)

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2SC2688

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Base And Collector Saturation

Voltage vs. Collector Current

Gain Banddwidth Product Vs.

Emitter Current

10.0

5.0

I_C=10·I_B

V_CE=30V

V_BE(SAT)

1.0

0.5

200

100

0.1

V_CE(SAT)

0.05

0.01

-1

-5 -10

-50 -100

0.1 0.5 1

5 10 50 100 5001000

Emitter Current, I_E(mA)

Collector Current, I_C(mA)

Feedback Capacitance

vs.Collectorto Base Voltage

I_E=0

f=1MHz

50 100

Collector to Base Voltage, V_CB(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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