2SC3647_09 [UTC]
HIGH-VOLTAGE SWITCHING APPLICATIONS; 高压开关的应用
| 型号： | 2SC3647_09 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH-VOLTAGE SWITCHING APPLICATIONS |
| 文件： | 总5页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD
2SC3647
NPN SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
FEATURES
* High breakdown voltage and large current capacity
* Fast switching time
* Very small size marking it easy to provide high – density,
small-sized hybrid ICs
1
SOT-89
Lead-free:
2SC3647L
Halogen-free: 2SC3647G
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
Lead Free Plating
Halogen Free
1
2
3
2SC3647L-x-AB3-R
2SC3647G-x-AB3-R
SOT-89
B
C
E
Tape Reel
www.unisonic.com.tw
1 of 5
Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R208-039,C
2SC3647
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
120
100
V
6
V
2
3
A
Collector Current (Pulse)
Collector Dissipation
ICP
A
PC
500
mW
°C
°C
Junction Temperature
TJ
150
Storage Temperature
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC = 10μA, IE =0
MIN TYP MAX UNIT
120
100
6
V
V
IC = 1mA, RBE =∞
IE = 10μA, IC=0
V
VCB = 100V, IE =0
100 nA
100 nA
IEBO
VEB = 4V, IC =0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE(SAT)
VBE(SAT)
Cob
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
VCB = 10V, f =1MHz
VCE = 5V, IC = 100mA
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VCE = 10V, IC = 100mA
0.13 0.4
V
V
0.85 1.2
16
pF
DC Current Gain
hFE
100
400
Turn-ON Time
tON
80
ns
ns
Storage Time
tSTG
1000
50
Fall Time
tF
ns
Gain-Bandwidth Product
fT
120
MHz
CLASSIFICATION OF hFE
■
RANK
R
S
T
RANGE
100 ~ 200
140 ~ 280
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
www.unisonic.com.tw
QW-R208-039,C
2SC3647
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
PW=20µS
IB1
DC≤1%
RB
IB2
INPUT
RL
VR
50Ω
+
+
100µF
470µF
-5V
50V
10IB1= -10IB2=IC=0.7A
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
www.unisonic.com.tw
QW-R208-039,C
2SC3647
NPN SILICON TRANSISTOR
■ TYPICAL CHARACTERICS
IC - VBE
hFE - IC
2.4
1000
VCE = 5V
VCE = 5V
7
2.0
1.6
1.2
0.8
0.4
0
5
3
2
100
7
5
3
0.01
7
2
3
5 7 0.1
2
3
5 7
1.0
2 3
0.2
0.4
0.6
08
1.0
1.2
0
Base to Emitter Voltage, VBE (V)
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
www.unisonic.com.tw
QW-R208-039,C
2SC3647
NPN SILICON TRANSISTOR
■
TYPICAL CHARACTERICS(Cont.)
VBE (sat) - IC
A S O
10
5
3
2
ICP
IC
IC/IB = 10
7
5
1.0
7
5
3
2
3
2
0.1
7
1.0
7
5
3
2
One Pulse - Ta = 25°C
Mounted on ceramic board
(250mm × 0.8mm)
5
0.01
7
3
5
0.1
1.0
7
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7 10
2
3
5 7 100
2
0.01
1.0
Collector Current, IC (A)
Collector to Emitter Voltage, VCE (V)
PC - Ta
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40 60
80 100 120 140 160
0
Ambient Temperature, Ta (°C)
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
www.unisonic.com.tw
QW-R208-039,C
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