2SC3648-S-AB3-R [UTC]

Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN;


型号：	2SC3648-S-AB3-R
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN 开关晶体管
文件：	总5页 (文件大小：228K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC3648

NPN SILICON TRANSISTOR

HIGH-VOLTAGE SWITCHING

PREDRIVER APPLICATIONS

FEATURES

* High Breakdown Voltage and Large Current Capacity

* Fast Switching Speed

* Over Current Protection Function

SOT-89

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-89

Packing

Normal

Lead Free

Halogen Free

2SC3648-x-AB3-R 2SC3648L-x-AB3-R 2SC3648G-x-AB3-R

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2SC3648

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta = 25°C)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

180

160

0.7

1.5

Collector Current (Pulse)

I_CP

Collector Dissipation

Junction Temperature

Storage Temperature

P_C

T_J

500

150

°C

T_STG

-40 ~ +150

°C

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C=10μA, I_E=0

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

180

160

I_C=1, R_BE=∞

I_E=10μA, I_C=0

V_CB=120V, I_E=0

0.1 μA

Emitter Cutoff Current

I_EBO

V_EB=4V, I_C=0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

V_CE(SAT)

V_BE(SAT)

Cob

I_C=250mA, I_B=25mA

V_CB=10V, f =1MHz

V_CE=5V, I_C=100mA

V_CE=5V, I_C=10mA

See specified Test circuit

V_CE=5V, I_C=50mA

0.12 0.4

0.85 1.2

h_FE1

100

400

DC Current Gain

h_FE2

Turn-on Time

t_ON

1000

Storage Time

t_STG

Fall Time

t_F

Gain-Bandwidth Product

f_T

120

MHz

CLASSIFICATION OF h_FE1

RANK

RANGE

100 ~ 200

140 ~ 280

200 ~ 400

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2SC3648

NPN SILICON TRANSISTOR

SWITCHING TIME TEST CIRCUIT

PW=20µS

I_B1

DC≤1%

R_B

INPUT

I_B2

V_R

333Ω

50Ω

100µF

470µF

-5V

100V

20I_B1= -20I_B2=I_C=300mA

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2SC3648

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

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2SC3648

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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