2SC3648L-S-AB3-R [UTC]
Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3;型号: | 2SC3648L-S-AB3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3 开关 晶体管 |
文件: | 总5页 (文件大小:228K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC3648
NPN SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
PREDRIVER APPLICATIONS
FEATURES
* High Breakdown Voltage and Large Current Capacity
* Fast Switching Speed
* Over Current Protection Function
1
SOT-89
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-89
Packing
Normal
Lead Free
Halogen Free
1
2
3
2SC3648-x-AB3-R 2SC3648L-x-AB3-R 2SC3648G-x-AB3-R
B
C
E
Tape Reel
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Copyright © 2010 Unisonic Technologies Co., Ltd
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2SC3648
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta = 25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
180
160
6
V
V
V
A
A
0.7
1.5
Collector Current (Pulse)
ICP
Collector Dissipation
Junction Temperature
Storage Temperature
PC
TJ
500
150
mW
°C
TSTG
-40 ~ +150
°C
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC =10μA, IE =0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
180
160
6
V
V
IC =1, RBE =∞
IE =10μA, IC=0
V
VCB =120V, IE =0
0.1 μA
0.1 μA
Emitter Cutoff Current
IEBO
VEB =4V, IC =0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE(SAT)
VBE(SAT)
Cob
IC =250mA, IB =25mA
IC =250mA, IB =25mA
VCB =10V, f =1MHz
VCE =5V, IC =100mA
VCE =5V, IC =10mA
See specified Test circuit
See specified Test circuit
See specified Test circuit
VCE =5V, IC =50mA
0.12 0.4
V
V
0.85 1.2
8
pF
hFE1
100
90
400
DC Current Gain
hFE2
Turn-on Time
tON
50
1000
60
ns
ns
Storage Time
tSTG
Fall Time
tF
ns
Gain-Bandwidth Product
fT
120
MHz
CLASSIFICATION OF hFE1
RANK
R
S
T
RANGE
100 ~ 200
140 ~ 280
200 ~ 400
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2SC3648
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
PW=20µS
IB1
DC≤1%
RB
INPUT
IB2
VR
333Ω
50Ω
+
+
100µF
470µF
-5V
100V
20IB1= -20IB2=IC=300mA
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2SC3648
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
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2SC3648
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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