2SC3648 [UTC]

HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS; 高压开关PREDRIVER应用
2SC3648
型号: 2SC3648
厂家: Unisonic Technologies    Unisonic Technologies
描述:

HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS
高压开关PREDRIVER应用

晶体 开关 晶体管 高压 驱动
文件: 总4页 (文件大小:171K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO.,  
2SC3648  
HIGH-VOLTAGE SWITCHING  
PREDRIVER APPLICATIONS  
NPN EPITAXIAL SILICON TRANSISTOR  
FEATURES  
1
* High breakdown voltage and large current capacity  
* Fast switching speed  
* Over Current Protection Function  
SOT-89  
*Pb-free plating product number: 2SC3648L  
PIN CONFIGURATION  
PIN NO.  
PIN NAME  
Emitter  
Collector  
Base  
1
2
3
ORDERING INFORMATION  
Order Number  
Package  
SOT-89  
Packing  
Tape Reel  
Normal  
Lead free  
2SC3648-AB3-R 2SC3648L-AB3-R  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co.,  
1
QW-R208-038,A  
2SC3648  
NPN EPITAXIAL SILICON TRANSISTOR  
ABSOLUATE MAXIUM RATINGS (Ta = 25)  
PARAMETER SYMBOL  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
RATINGS  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
180  
160  
6
V
V
V
A
A
0.7  
1.5  
Collector Current (Pulse)  
ICP  
PC (Mounted on ceramic  
1.3  
W
board 250mm2 ×0.8mm)  
Collector Dissipation  
PC  
TJ  
TSTG  
500  
150  
-40 ~ +150  
mW  
°C  
Junction Temperature  
Storage Temperature  
°C  
ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified)  
PARAMETER  
C-E Saturation Voltage  
B-E Saturation Voltage  
C-B Breakdown Voltage  
C-E Breakdown Voltage  
E-B Breakdown Voltage  
Collector Cutoff Curent  
Emitter Cutoff Curent  
SYMBOL  
VCE(sat)  
VBE(sat)  
TEST CONDITIONS  
IC =250mA, IB =25mA  
IC =250mA, IB =25mA  
MIN  
TYP  
0.12  
0.85  
MAX UNIT  
0.4  
1.2  
V
V
V
V(BR)CBO IC =10µA, IE =0  
180  
160  
6
IC =1, RBE =∞  
V(BR)CEO  
V(BR)EBO IE =10µA, IC=0  
V
V
VCB =120V, IE =0  
ICBO  
IEBO  
Cob  
hFE 1  
hFE 2  
tON  
tSTG  
tF  
fT  
0.1  
0.1  
µA  
µA  
pF  
VEB =4V, IC =0  
Output Capacitance  
VCB =10V, f =1MHz  
VCE =5V, IC =100mA  
8
100  
90  
400  
DC Current Gain  
VCE =5V, IC =10mA  
Turn-on Time  
See specified Test circuit  
See specified Test circuit  
See specified Test circuit  
VCE =5V, IC =50mA  
50  
1000  
60  
ns  
ns  
ns  
Storage Time  
Fall Time  
Gain-Bandwidth Product  
120  
MHz  
CLASSIFICATION OF hFE 1  
RANK  
RANGE  
R
S
T
100 ~ 200  
140 ~ 280  
200 ~ 400  
SWITCHING TIME TEST CIRCUIT  
PW=20μS  
DC1%  
IB1  
RB  
IB2  
INPUT  
VR  
333  
50  
+
100μ  
+
470μ  
-5V  
100V  
20IB1= -20IB2=IC=300mA  
Unit (Resistance:Ω, Capacitance:F )  
UNISONIC TECHNOLOGIES CO., LTD  
2
www.unisonic.com.tw  
QW-R208-038,A  
2SC3648  
NPN EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERICS  
IC - VCE  
IC - VCE  
1000  
800  
800  
80mA  
70mA  
700  
600  
500  
400  
300  
200  
100mA  
90mA  
60mA  
50mA  
40mA  
4.0mA  
3.5mA  
3.0mA  
2.5mA  
600  
400  
200  
0
30mA  
20mA  
2.0mA  
1.5mA  
1.0mA  
0.5mA  
10mA  
100  
0
IB=0  
IB=0  
800 1000  
0
10 20  
30  
40  
50 60 70 80  
0
200  
400  
600  
Collector to Emitter Voltage, VCE (mV)  
Collector to Emitter Voltage, VCE (V)  
IC - VBE  
hFE - IC  
1000  
1000  
800  
Pulse  
7
VCE = 5V  
5
3
2
100  
600  
VCE=2V  
VCE=5V  
VCE=10V  
7
5
3
2
400  
200  
0
10  
7
5
3
5
2
5
2
3
5
2
7 10  
7 100  
3
3
7 1000  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
Collector Current, IC (mA)  
Base to Emitter Voltage, VBE (V)  
V
CE(sat) - IC  
C
ob - VCB  
100  
10  
F= 1MHZ  
IC/IB=10  
7
5
7
5
3
3
2
2
1.0  
7
5
10  
3
2
7
5
0.1  
3
2
7
5
3
2
1.0  
2
3
5
3
5
2
3
5
2
3
5
2
7 10  
7 100  
7 1000  
7
2
3
5
7
2
1.0  
10  
Collector to Base Voltage, VCB (V)  
100  
Collector Current, IC (mA)  
UNISONIC TECHNOLOGIES CO., LTD  
3
www.unisonic.com.tw  
QW-R208-038,A  
2SC3648  
NPN EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERICS(Cont.)  
fT - IC  
ASO  
3
2
5
Icp  
Ic  
3
1ms  
1.0  
2
7
5
VCE=10V  
10ms  
100ms  
3
2
100  
7
VCE=5V  
DC Operation  
0.17  
5
5
3
2
3
2
Ta = 25℃  
Single pulse  
0.01 Mounted2on ceramic board  
7
5
1.0  
(250mm × 0.8mm)  
10 5  
7
2
3
5
2
2
3
5
7
3
5
7
2
5
7
2
3
10  
7100  
3
10  
100  
1000  
Collector Current, IC (mA)  
PC- Ta  
Collectorto Emitter Voltage, VCE (V)  
1.8  
1.6  
Mounted on ceramic board (250mm2× 0.8mm)  
1.4  
1.2  
1.0  
0.8  
0.6  
No heat sink  
0.4  
0.2  
0
0
20 40  
60 80 100 120 140 160  
Ambient Temperature, Ta ()  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4
www.unisonic.com.tw  
QW-R208-038,A  

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