2SC3669L-Y-TN3-T [UTC]
Small Signal Bipolar Transistor;型号: | 2SC3669L-Y-TN3-T |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor |
文件: | 总4页 (文件大小:270K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage
CE(SAT)=0.5V (Max.)
V
* High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
B
B
B
2
3
E
E
E
E
E
SOT-223
SOT-89
TO-251
TO-252
TO-252
C
C
C
C
C
Tape Reel
Tape Reel
Tube
2SC3669L-x-AA3-R
2SC3669L-x-AB3-R
2SC3669L-x-TM3-T
2SC3669L-x-TN3-T
2SC3669L-x-TN3-R
2SC3669G-x-AA3-R
2SC3669G-x-AB3-R
2SC3669G-x-TM3-T
2SC3669G-x-TN3-T
2SC3669G-x-TN3-R
Tube
Tape Reel
Note: Pin Assignment: B: Base C: Collector
E: Emitter
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R209-015.C
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
PIN ABSOLUTE MAXIMUM RATING ( TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
80
80
V
5
V
2
A
Base Current
IB
1
A
SOT-223/SOT-89
TO-251/TO-252
0.5
1
W
W
°C
°C
Collector Power Dissipation
PC
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range
and assured by design from –20°C~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V(BR)CEO
ICBO
TEST CONDITIONS
IC= 10mA, IB= 0
MIN TYP MAX UNIT
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
80
V
VCB=80V, IE= 0
1.0
1.0
240
μA
μA
Emitter Cut-Off Current
IEBO
VEB= 5V, IC=0
hFE1
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB= 10V, IE= 0, f=1MHz
70
40
DC Current Gain
hFE2
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
VCE(SAT)
VBE(SAT)
fT
0.15 0.5
V
V
0.9
100
30
1.2
MHz
pF
Collector Output Capacitance
Cob
Turn-on Time
tON
TSTG
tf
0.2
1.0
0.2
μs
μs
μs
Switching Time
Storage Time
Fall Time
IB1= -IB2=0.05A
DUTY CYCLE ≤ 1%
CLASSIFICATION OF hFE1
RANK
O
Y
RANGE
70~140
120~240
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-015.C
www.unisonic.com.tw
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-015.C
www.unisonic.com.tw
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-015.C
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