2SC3834_09 [UTC]

SWITCH NPN TRANSISTOR; 开关NPN晶体管
2SC3834_09
型号: 2SC3834_09
厂家: Unisonic Technologies    Unisonic Technologies
描述:

SWITCH NPN TRANSISTOR
开关NPN晶体管

晶体 开关 晶体管
文件: 总4页 (文件大小:199K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SC3834  
NPN SILICON TRANSISTOR  
SWITCH NPN TRANSISTOR  
„
DESCRIPTION  
The UTC 2SC3834 is an epitaxial planar type NPN silicon  
transistor..  
„
FEATURES  
* Humidifier, DC-DC converter, and general purpose  
Lead-free:  
2SC3834L  
Halogen-free: 2SC3834G  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220  
Packing  
Tube  
Normal  
Lead Free Plating  
2SC3834L-TA3-T  
Halogen Free  
1
2
3
2SC3834-TA3-T  
2SC3834G-TA3-T  
B
C
E
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R203-026.C  
2SC3834  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-emitter voltage  
Emitter-Base Voltage  
Collector Current (Pulse)  
Base Current  
200  
120  
8
V
V
A
7
3
50  
A
IB  
PC  
W
Collector Dissipation (TC=25°C)  
Junction Temperature  
TJ  
+150  
°C  
°C  
Storage Temperature  
TSTG  
-55 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCEO  
ICBO  
TEST CONDITIONS  
IC= 50mA  
MIN TYP MAX UNIT  
V
Collector-Emitter Breakdown Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
120  
μA  
V
V
V
CB=200V, IE=0A  
100  
IEBO  
μA  
EB=8V, IC=0A  
CE=4V, IC=3A  
100  
220  
0.5  
1.2  
DC Current Gain (Note)  
hFE  
70  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT)  
VBE(SAT)  
fT  
V
V
IC=3A, IB=0.3mA  
IC=3A, IB=0.3mA  
MHz  
pF  
IE=-0.5mA, VCE=12V, f=100MHz  
30  
Cob  
VCB=10 V, IE=0A, f=1MHz  
110  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R203-026.C  
www.unisonic.com.tw  
2SC3834  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
V
CE(SAT)-IB Characteristics (Typical)  
IC-VCE Characteristics (Typical)  
7
6
200mA  
150mA  
2
1
0
100mA  
5
4
3
60mA  
40mA  
5A  
20mA  
IC=1A  
3A  
2
1
0
IE=10mA  
0
1
2
3
4
0.005 0.01  
0.05 0.1  
0.5  
1
Collector-Emitter Voltage,VCE (V)  
Base Current,IB (A)  
fT-IE Characteristics (Typical)  
VCE=12V  
Safe Operating Area (Single Pulse)  
100ms  
30  
20  
20  
10  
5
10ms  
1
Without  
Healstink  
Natural  
0.5  
10  
0
Cooling  
0.1  
0.05  
-0.01  
-0.05 -0.1  
-0.5 -1  
-5  
5
10  
50  
120 200  
Collect-Emitter Voltage,VCE (V)  
Emitter Current,IE (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R203-026.C  
www.unisonic.com.tw  
2SC3834  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
PC-TA Derating  
50  
40  
30  
20  
10  
Without Heatsink  
2
0
0
25  
50  
75  
100 125  
150  
Ambient Temperature,TA ()  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R203-026.C  
www.unisonic.com.tw  

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