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2SC4027G-X-TN3-R [UTC]

HIGH-VOLTAGE SWITCHING APPLICATIONS; 高压开关的应用
2SC4027G-X-TN3-R
型号： 2SC4027G-X-TN3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

HIGH-VOLTAGE SWITCHING APPLICATIONS
高压开关的应用

开关 高压
文件： 总5页 (文件大小：146K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2SC4027  
NPN SILICON TRANSISTOR  
HIGH-VOLTAGE SWITCHING  
APPLICATIONS  
„
FEATURES  
* High voltage and large current capacity.  
* Fast switching time.  
1
TO-252  
Lead-free:  
2SC4027L  
Halogen-free:2SC4027G  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-252  
Packing  
Normal  
Lead Free  
Halogen Free  
1
2
3
2SC4027-x-TN3-R 2SC4027L-x-TN3-R 2SC4027G-x-TN3-R  
B
C
E
Tape Reel  
www.unisonic.com.tw  
1 of 5  
Copyright © 2009 Unisonic Technologies Co., Ltd  
QW-R209-018.B  
2SC4027  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
180  
160  
V
6
1.5  
V
A
Collector Current (Pulse)  
ICP  
2.5  
A
Ta=25°C  
TC=25°C  
1
W
W
°C  
°C  
Collector Dissipation  
Pc  
15  
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-55 ~+150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
BVCBO IC=10A, IE=0  
180  
160  
6
V
V
BVCEO IC =1mA, RBE=∞  
BVEBO IE=10μA, IC =0  
V
VCE(SAT) IC =500mA, IB=50mA  
VBE(SAT) IC =500mA, IB=50mA  
0.13 0.45  
0.85 1.2  
1.0  
V
V
ICBO  
IEBO  
hFE1  
hFE2  
fT  
VCB=120V, IE=0  
μA  
μA  
Emitter Cutoff Current  
VEB=4V, I IC =0  
1.0  
VCE=5V, IC =100mA  
VCE=5V, IC =10mA  
VCE=10V, IC =50mA  
VCB=-10V, f=1MHz  
See specified Test Circuit  
100  
80  
400  
DC Current Gain  
Gain-Bandwidth Product  
Output Capacitance  
Turn-On Time  
120  
12  
MHz  
pF  
Cob  
TON  
TSTG  
tF  
60  
μs  
Storage Time  
1.2  
80  
μs  
Fall Time  
μs  
„
CLASSIFICATION OF hFE1  
RANK  
R
S
T
RANGE  
100~200  
140~280  
200~400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R209-018.B  
www.unisonic.com.tw  
2SC4027  
NPN SILICON TRANSISTOR  
„
SWITCHING TIME TEST CIRCUIT  
OUTPUT  
IB1  
RB  
IB2  
INPUT  
PW=20µs  
D.C.≤1%  
RL  
14kΩ  
VR  
50Ω  
+
+
100µF  
470µF  
100V  
10IB1= -10IB2=Ic=0.7A  
-5V  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R209-018.B  
www.unisonic.com.tw  
2SC4027  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Collector Current vs.  
Collector Current vs.  
Collector to Emitter Voltage  
Collector to Emitter Voltage  
1.0  
0.8  
0.6  
1.8  
1.6  
1.4  
1.2  
4.5mA  
4.0mA  
2.5mA  
1.0  
0.8  
0.6  
2.0mA  
1.5mA  
0.4  
0.2  
0
1.0mA  
0.4  
0.2  
0
1mA  
IB=0  
0.5mA  
IB=0  
0
1
2
3
4
5
0
10  
20  
30  
40  
50  
Collector to Emitter Voltage, VCE (V)  
Collector to Emitter Voltage, VCE (V)  
Collector Current vs.  
Base to Emitter Voltage  
DC Current vs. Collector Current  
VCE=5V  
1.6  
1.2  
1000  
100  
VCE=5V  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
0.8  
0.4  
0
10  
0.1  
1.0  
0
0.2 0.4 0.6 0.8  
1.0  
1.2  
0.01  
Base to Emitter Voltage, VBE (V)  
Collector Current, Ic (A)  
Gain Bandwidth Product vs.  
Collector Current  
VCE=10V  
Output Capacitance vs.  
Collector to Base Voltage  
100  
f=1MHz  
100  
10  
10  
0.01  
10  
100  
1.0  
0.1  
1.0  
Collector Current, Ic (A)  
Collector to Base Voltage, VCB (V)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R209-018.B  
www.unisonic.com.tw  
2SC4027  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
Collector to Emitter Saturation Voltage  
vs. Collector Current  
Collector to Emitter Saturation Voltage  
vs. Collector Current  
10  
Ic/IB=10  
Ic/IB=10  
1000  
100  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
1.0  
25°C  
75°C  
Ta=-25°C  
0.01  
0.1  
1.0  
0.1  
1.0  
0.01  
Collector Current, Ic (A)  
Collector Current, Ic (A)  
Collector Current vs.  
Collector to Emitter Voltage  
ICP=2.5A  
Collector Dissipation vs.  
Ambient Temperature  
16  
14  
12  
10  
IC=1.5A  
1.0  
0.1  
8
6
4
2
0
No heat sink  
One pulse  
Tc =25°C  
0.01  
10  
1.0  
100  
60  
Ambient Temperature, Ta(°C)  
0
20 40  
80  
120 140 160  
100  
Collector to Emitter Voltage, VCE(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R209-018.B  
www.unisonic.com.tw  

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