2SC4617G-R-AB3-R [UTC]
Small Signal Bipolar Transistor;
| 型号： | 2SC4617G-R-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor 晶体管 |
| 文件： | 总5页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC4617
NPN SILICON TRANSISTOR
GENERAL PURPOSE
TRANSISTOR
FEATURES
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
ORDERING INFORMATION
Ordering Number
Halogen Free
Pin Assignment
Packing
Package
1
B
E
E
E
E
2
C
B
B
B
B
3
E
C
C
C
C
2SC4617G-x-AB3-R
2SC4617G-x-AE3-R
2SC4617G-x-AL3-R
2SC4617G-x-AN3-R
2SC4617G-x-AQ3-R
SOT-89
SOT-23
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
SOT-323
SOT-523
SOT-723
Note: Pin assignment: E: Emitter
B: Base
C: Collector
MARKING
SOT-89
SOT-23 / SOT-323 / SOT-523 / SOT-723
C5G
www.unisonic.com.tw
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R206-081.G
2SC4617
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
60
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
V
7
V
0.15
500
A
SOT-89
mW
mW
mW
mW
°C
SOT-523
150
Collector Power Dissipation
PC
SOT-23/SOT-323
SOT-723
200
125
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC= 50μA
MIN
60
50
7
TYP
MAX UNIT
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V
V
V
IC= 1mA
IE=50μA
VCB=60V
0.1
0.1
560
0.4
μA
μA
IEBO
VEB= 7V
DC Current Gain
hFE
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=12V, IE= -2mA, f=100MHz
VCE= 12V, IE= 0A, f=1MHz
120
Collector-Emitter Saturation Voltage
Transition Frequency
VCE(SAT)
fT
V
180
2
MHz
pF
Output Capacitance
Cob
3.5
CLASSIFICATION OF hFE
RANK
Q
R
S
RANGE
120 ~ 270
180 ~ 390
270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-081.G
www.unisonic.com.tw
2SC4617
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
Grounded Emitter Output Characteristics (I)
50
100
0.50mA
0.45mA
VCE = 6V
TA=25°C
20
10
5
0.35mA
0.30mA
0.25mA
0.20mA
80
60
40
0.40mA
25°C
2
1
0.15mA
0.10mA
0.05mA
-55°C
TA=100°C
0.5
20
0
0.2
0.1
IB = 0A
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base to Emitter Voltage, VBE (V)
0
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-081.G
www.unisonic.com.tw
2SC4617
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOIES CO., LTD
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QW-R206-081.G
www.unisonc.com.tw
2SC4617
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-081.G
www.unisonic.com.tw
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