2SC4617G-S-AN3-R [UTC]

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3;


型号：	2SC4617G-S-AN3-R
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3 光电二极管晶体管
文件：	总5页 (文件大小：207K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC4617

NPN SILICON TRANSISTOR

GENERAL PURPOSE

TRANSISTOR



FEATURES

SOT-23

SOT-323

* Low Cob

Cob=2.0pF (typ)

* Complements the UTC 2SA1774

(JEDEC TO-236)

SOT-523

SOT-723

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

2SC4617L-x-AE3-R

2SC4617L-x-AL3-R

2SC4617L-x-AN3-R

2SC4617L-x-AQ3-R

2SC4617G-x-AE3-R

2SC4617G-x-AL3-R

2SC4617G-x-AN3-R

2SC4617G-x-AQ3-R

SOT-23

SOT-323

SOT-523

SOT-723

Tape Reel

(1) R: Tape Reel

2SC4617L- x -AE3- R

(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523

(2) AQ3: SOT-723

(1)Packing Type

(2)Package Type

(3)Rank

(3) Refer to CLASSIFICATION OF H_FE

(4) L: Lead Free, G: Halogen Free

(4)Lead Free

 MARKING

L: Lead Free

G: Halogen Free

C5X

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NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.15

SOT-523

150

°C

Collector Power Dissipation SOT-23/SOT-323

SOT-723

P_C

200

125

Junction Temperature

T_J

+150

-55 ~ +150

Storage Temperature

T_STG

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C= 50μA

MIN

TYP

MAX UNIT

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter-base Breakdown Voltage

Collector Cut-Off Current

I_C= 1mA

I_E=50μA

V_CB=60V

0.1

560

0.4

μA

Emitter Cut-Off Current

I_EBO

V_EB= 7V

DC Current Gain

h_FE

V_CE=6V, I_C=1mA

I_C=50mA, I_B=5mA

120

Collector-Emitter Saturation Voltage

V_CE(SAT)

_CE=12V, I_E= -2mA,

f=100MHz

Transition Frequency

Output Capacitance

f_T

180

MHz

C_ob

V_CE= 12V, I_E= 0A, f=1MHz

3.5



CLASSIFICATION OF h_FE

RANK

RANGE

120 ~ 270

180 ~ 390

270 ~ 560

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NPN SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

Grounded Emitter Propagation

Characteristics

Grounded Emitter Output Characteristics (I)

100

0.50mA

0.45mA

V_CE= 6V

T_A=25°C

0.35mA

0.30mA

0.25mA

0.20mA

0.40mA

25°C

0.15mA

0.10mA

0.05mA

-55°C

T_A=100°C

0.5

0.2

0.1

I_B= 0A

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Base to Emitter Voltage, V_BE(V)

0.4

0.8

1.2

1.6

2.0

Collector to Emitter Voltage, V_CE(V)

Grounded Emitter Output Characteristics (II)

DC Current Gain vs. Collector Current (I)

500

30µA

T_A= 25°C

27µA

24µA

21µA

V_CC= 5V

200

100

18µA

15µA

12µA

9µA

6µA

3µA

I_B= 0A

0.2

0.5

10 20

50 100 200

Collector to Emitter Voltage, V_CE(V)

Collector Current, I_C(mA)

DC Current Gain vs. Collector Current (II)

Collector-Emitter Saturation Voltage vs. Collector

Current

500

V_CC= 5V

Ta = 100℃

Ta = 25℃

0.5

25℃

-55℃

200

100

0.2

0.1

I_C/I_B= 5V

0.05

0.02

0.01

0.2 0.5

10 20 50 100 200

0.2 0.5 1

10 20 50 100 200

Collector Current, I_C(mA)

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2SC4617

NPN SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

Collector-Emitter Saturation Voltage

vs. Collector Current (I)

Collector-Emitter Saturation Voltage

vs. Collector Current (II)

0.5

0.2

I_C/I_B= 50

I_C/I_B= 10

T_A= 100°C

0.2

0.1

25°C

-55°C

T_A= 100°C

0.1

25°C

55°C

0.05

0.02

0.01

0.02

0.01

0.2 0.5 1

5 10 20 50 100

0.2 0.5 1

5 10 20 50 100 200

Collector Current, I_C(mA)

Collector current, I_C(mA)

Collector Output Capacitance vs. Collector-Base Voltage

Emitter Input Capacitance vs. Emitter-Base Voltage

Gain Bandwidth Product vs. Emitter

Current

T_A=25°C

f=1MHz

T_A=25°C

_CE=6V

500

200

C_ib

I_E=0A

I_C=0A

C_ob

100

-0.5 -1

-2

-5 -10 -20

-50 -100

0.2

0.5

Collector to Base Voltage, V_CB(V)

Emitter to Base Voltage, V_EB(V)

Collector Current, I_E(mA)

Base-Collector Time Constant

vs. Emitter Current

T_A= 100°C

f=32MHZ

_CB=6V

200

100

0.2

-0.5

Emitter Current, I_E(mA)

-10

-1

-2

-5

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2SC4617

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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