2SC4793L-B-TF3-T [UTC]

Power Bipolar Transistor;


型号：	2SC4793L-B-TF3-T
厂家：	Unisonic Technologies
描述：	Power Bipolar Transistor 局域网放大器晶体管
文件：	总4页 (文件大小：46K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC4793

NPN SILICON TRANSISTOR

ꢀ

FEATURES

*High transition frequency

*Power amplifier applications

*Driver stage amplifier applications

TO-220F

*Pb-free plating product number:2SC4793L

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

TO-220F

Normal

Lead Free Plating

2SC4793-x-TF3-T

2SC4793L-x-TF3-T

Tube

2C4793L-x-TF3-T

(1)Packing Type

(2)Package Type

(1) T: Tube

(2) TF3: TO-220F

(3) refer to Classification of h

(3)Rank

(4)Lead Plating

(4) L: Lead Free Plating, Blank: Pb/Sn

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2SC4793

NPN SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

230

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

230

0.1

Base Current

I_B

Ta=25℃

T_C=25℃

2.0

℃

Collector Power Dissipation

P_C

Junction Temperature

T_J

+150

-55 ~ +150

Storage Temperature Range

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless others specified)

PARAMETER

SYMBOL TEST CONDITIONS

BV_CEOI_C=10mA_,I_B=0

MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage

Base -Emitter Voltage

230

V_BE

V_CE=5V_,I_C=500mA

1.0

1.5

1.0

320

Collector-Emitter Saturation Voltage

Collector Cut-off Current

Emitter Cut-off Current

V_CE(SAT)I_C=500mA_,I_B=50mA

I_CBO

I_EBO

h_FE

f_T

V_CB=230V_,I_E=0

µA

V_EB=5V_,I_C=0

DC Current Gain

V_CE=5V_,I_C=100mA

V_CE=10V_,I_C=100mA

V_CB=10V_,I_E=0_,f=1MHz

100

Transition Frequency

100

MHz

Collector Output Capacitance

Cob

ꢀ

CLASSIFICATION OF h_FE

RANK

RANGE

100-200

180-320

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2SC4793

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Transition Frequency vs. Collector Current

Collector Current vs. Base-Emitter Voltage

1000

300

1.0

0.8

Common Emitter

CE=10V

=25℃

=100 ℃

-25

100

0.6

0.4

0.2

Common Emitter

VCE=5V

100

300

1000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Collector Current, I

(mA)

Base-Emitter Voltage, VBE (V)

Collector-Emitter Saturation Voltage vs. Collector Current

DC Current Gain vs. Collector Current

1000

Common Emitter

CE=5V

Common Emitter

IC/IB=10

500

300

0.5

0.3

=100℃

TC=100°C

-25

100

0.1

-25

0.05

0.03

0.01

0.003

0.01

0.3

(A)

0.01

0.03

0.1

0.003

0.03

0.1

0.3

Collector Current, I

(A)

Safe Operating Area

Collector Current vs. Collector-Emitter Voltage

1.0

MAX. (Pulsed)※

MAX.

(Continuous)

1ms※

10ms※

100ms※

0.8

0.6

0.4

0.5

0.3

DC Operation

=25℃

0.1

IB=2mA

0.05

※Single Nonrepetitive

0.03 Pulse T =25°C Curves Must

0.2

be Derated Linearly With

Increase in Temperature.

MAX .

CEO

Common Emitter

=25℃

0.01

Collector-Emitter Voltage, VCE (V)

100

300

Collector-Emitter Voltage, VCE (V)

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2SC4793

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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