2SC5027EL-X-TA3-T [UTC]

HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR; 高电压和高可靠性晶体管


型号：	2SC5027EL-X-TA3-T
厂家：	Unisonic Technologies
描述：	HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR 高电压和高可靠性晶体管晶体晶体管高压
文件：	总4页 (文件大小：51K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC5027E

NPN SILICON TRANSISTOR

HIGH VOLTAGE AND HIGH

RELIABILITY TRANSISTOR

ꢀ FEATURES

* High Speed Switching

* Wide SOA

TO-220

TO-220F

*Pb-free plating product number: 2SC5027EL

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

2SC5027EL-x-TA3-T

2SC5027EL-x-TF3-T

2SC5027E-x-TA3-T

2SC5027E-x-TF3-T

TO-220

Tube

TO-220F

2SC5027EL-x-TA3-T

(1)Packing Type

(1) T: Tube

(2)Package Type

(3)Rank

(2) TA3: TO-220, TF3: TO-220F

(3) x: refer to Classification of h

FE1

(4)Lead Plating

(4) L: Lead Free Plating, Blank: Pb/Sn

www.unisonic.com.tw

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QW-R203-030,B

2SC5027E

ꢀ ABSOLUATE MAXIUM RATINGS (Tc = 25

NPN SILICON TRANSISTOR

℃)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Peak Collector Current

Collector Current (Pulse)

Base Current

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

750

700

I_CP

I_B

1.5

Power Dissipation

P_D

℃

Junction Temperature

Storage Temperature

T_J

150

T_STG

-40 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ ELECTRICAL CHARACTERISTICS (T_C= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

BV_CBO

TEST CONDITIONS

I_C=1mA, I_E=0

MIN

750

700

TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

BV_CEO

I_C=5mA, I_B=0

BV_EBO

I_E=1mA, I_C=0

I_C=1.5A, I_B1= -I_B2=0.3A

L=2mH, Clamped

V_CB=750V, I_E=0

V_EB=5V, I_C=0

Collector-Emitter sustaining Voltage

V_CEO(SUS)

700

μA

Collector Cut-off Current

Emitter Cut-off Current

I_CBO

I_EBO

h_FE1

h_{FE 2}

V_CE=5V, I_C=0.2A

V_CE=5V, I_C=1A

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

V_{CE (SAT)}I_C=1.5A, I_B=0.3A

V_{BE (SAT)}I_C=1.5A, I_B=0.3A

1.5

Cob

f_T

V_CB=10V, f=1MHz, I_E=0

Current Gain Bandwidth Product

Turn ON Time

V_CE=10V, I_C=0.2A

V_CC=400V

I_C=5I_B1= -2.5I_B2=2A

MHz

t_ON

t_S

0.5

Storage Time

R_L=200Ω

Fall Time

t_F

0.3

ꢀ

CLASSIFICATION of h_FE1

CLASSIFICATION

RANGE

10 ~ 20

15 ~ 30

20 ~ 40

UNISONIC TECHNOLOGIES CO., LTD

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QW-R203-030,B

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2SC5027E

NPN SILICON TRANSISTOR

■ TYPICAL CHARACTERISTICS

DC Current Gain

Static Characteristic

4.0

1000

VCE=5V

3.6

3.2

2.8

100

=250 mA

=200 mA

=150 mA

=100 mA

=80mA

=60mA

=50mA

=40mA

=30mA

=20mA

2.4

2.0

1.6

1.2

0.8

0.4

=10mA

=0mA

100us

0.1

1ms

0.01

0.0

Collectoer-Emitter Voltage, VCE (V)

Collector Current, I (A)

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

Collector-Emitter Saturation Voltage

Ic=5I

4.0

VCE=5V

3.5

3.0

2.5

2.0

1.5

1.0

0.1

0.5

0.0

100us

0.1

1ms

0.01

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

Collector Current, IC (A)

Base-Emitter Voltage, V^BE(V)

Switching Time

Safe Operating Area

100

Vcc =400 V

5.I 1= - 2.5.IB2=Ic

IcMAX.(Pulse)

IcMAX.(Continuous )

0.1

0.01

1ms

1E-s

0.01

0.1

100

1000

10000

3 of 4

Collector-Emitter Voltage, VCE (V)

UNISONIC TECHNOLOGIES CO., LTD

QW-R203-030,B

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2SC5027E

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS(Cont.)

Reverse Operating Area

Power Derating

100

IB2=-0.3A

100us

100

1ms

0.0

1000

10000

150 175

(℃)

100 125

Collector-Emitter Voltage, VCE (V)

Case Temperature, T

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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