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2SC5200G-O-T3L-T [UTC]

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PL, 3 PIN;
2SC5200G-O-T3L-T
型号： 2SC5200G-O-T3L-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PL, 3 PIN

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UNISONIC TECHNOLOGIES CO., LTD  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
POWER AMPLIFIER  
APPLICATIONS  
FEATURES  
* Recommended for 100W High Fidelity Audio Frequency  
Amplifier Output Stage.  
* Complementary to UTC 2SA1943  
ORDERING INFORMATION  
Order Number  
Lead Free  
Pin Assignment  
Package  
TO-3PL  
Packing  
Tube  
Halogen Free  
1
2
3
2SC5200-x-T3L-T  
2SC5200-x-T3L-T  
B
C
E
www.unisonic.com.tw  
Copyright © 2013 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R214-005, B  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TC=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
230  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
230  
V
5
V
Collector Current  
15  
A
Base Current  
IB  
1.5  
A
Collector Power Dissipation (TC=25°C)  
Junction Temperature  
Storage Temperature Range  
PC  
150  
W
°C  
°C  
TJ  
150  
TSTG  
-55 ~ 150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TC=25°C)  
PARAMETER  
SYMBOL  
V(BR) CEO  
VCE(SAT)  
VBE  
TEST CONDITIONS  
IC= 50mA, IB=0  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base -Emitter Voltage  
230  
V
V
IC= 8A, IB= 0.8A  
0.4  
1.0  
3.0  
1.5  
5.0  
5.0  
160  
VCE= 5V, IC= 7A  
VCB = 230V, IE=0  
VEB= 5V, IC=0  
V
Collector Cut-off Current  
ICBO  
μA  
μA  
Emitter Cut-off Current  
IEBO  
hFE1  
VCE= 5V, IC= 1A  
VCE= 5V, IC= 7A  
VCE= 5V, IC= 1A  
VCB= 10V, IE=0, f=1MHz  
55  
35  
DC Current Gain  
hFE2  
60  
30  
Transition Frequency  
fT  
MHz  
pF  
Collector Output Capacitance  
COB  
200  
CLASSIFICATION OF hFE1  
RANK  
Range  
R
O
55 ~ 110  
80 ~ 160  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R214-005, B  
www.unisonic.com.tw  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector-Emitter Saturation Voltage vs.  
Collector Current  
DC Current Gain vs. Collector Current  
300  
3
TC =100℃  
25  
100  
1
-25  
30  
10  
0.3  
0.1  
TC =100℃  
25  
-25  
COMMON EMITTER  
IC / IB = 10  
3
1
0.03  
0.01  
COMMON EMITTER  
IC / IB = 10  
10  
100  
0.1  
10  
100  
0.01  
0.1  
1
0.01  
1
Collector Current, IC (A)  
Collector Current, IC (A)  
Safe Operating Area  
50  
C MAX. (PULSED)  
30 I  
IC MAX.  
1ms  
(CONTINUOUS)  
10ms  
10  
5DC OPERATION  
100ms  
3TC =25°C  
1
0.5  
0.3  
SINGLE NONREPETITIVE  
PULSE TC = 25°C  
CURVES MUST BE  
DERATED LINEARLY  
WITH INCREASE IN  
TEMPERATURE.  
VCEO  
MAX.  
0.1  
0.05  
0.03  
3
10  
30  
100  
300 1000  
Collector-Emitter Voltage, VCE (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R214-005, B  
www.unisonic.com.tw  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R214-005, B  
www.unisonic.com.tw  

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